In this study, we demonstrate ferroelectricity in high-quality monocrystalline quaternary alloy
ScAlGaN. Sc 0.2 Al 0.45 Ga 0.35 N films are grown by plasma-assisted molecular beam …

The capability to reliably program partial polarization states with nanosecond programming
speed and femtojoule energies per bit in ferroelectrics makes them an ideal candidate to …

Abstract Wurtzite‐(Al, Sc) N films are promising candidates for ferroelectric memory devices
owing to their outstanding properties. However, there are many challenges on the way to …

Alloying wurtzite aluminum nitride and gallium nitride (GaN) with scandium (Sc) enhances
the piezoelectric and ferroelectric properties, but increasing the Sc concentration while …

The wide bandgap wurtzite Al 1-x Sc x N ferroelectric material is compatible with
semiconductor processes and offers advantages such as high remanent polarization (P r) …

Ferroelectrics are materials with crystallographically defined spontaneous polarizations that
can be reoriented by application of an electric field. The polarization remains after removal …

Compressive strain in thin ferroelectric Al 1–x Sc x N films with different Sc atom
concentrations (x) on sapphire substrates was identified by Raman spectroscopy …