Isolated and assembled silver aggregates on the Si (001) surface: The initial stage of film formation
We examined the dynamics of adsorption and the subsequent growth of submonolayered
silver on Si (001) from 100 K to 230 K, using scanning tunneling microscopy and density …
silver on Si (001) from 100 K to 230 K, using scanning tunneling microscopy and density …
An ab initio approach to anisotropic alloying into the Si (001) surface
DV Prodan, GV Paradezhenko, D Yudin… - Physical Chemistry …, 2023 - pubs.rsc.org
By employing density functional theory calculations, we explore the initial stage of
competitive alloying of co-deposited silver and indium atoms into a silicon surface. In …
competitive alloying of co-deposited silver and indium atoms into a silicon surface. In …
Adsorption and Migration of Silver on Group IV Semiconductor (001) Surfaces by Density Functional Theory
We examined the adsorption and subsequent migration of a silver monomer (Ag1), a dimer
(Ag2), and a tetramer (Ag4) on the group IV (001)(IV= C, Si, and Ge) semiconductor …
(Ag2), and a tetramer (Ag4) on the group IV (001)(IV= C, Si, and Ge) semiconductor …
Solving a long-standing problem regarding atomic structure of Si (100) 2× 3-Ag
AN Mihalyuk, VG Kotlyar, OA Utas… - The Journal of …, 2021 - ACS Publications
The atomic structure of the Si (100) 2× 3-Ag reconstruction has remained unknown for more
than 25 years since its first observation with scanning tunneling microscopy, despite a …
than 25 years since its first observation with scanning tunneling microscopy, despite a …
[BOOK][B] Heteroepitaxy in the Sub-Monolayer Regime: Ag on Si (001) and CuPc on Cu (111)
WS Huxter - 2019 - search.proquest.com
The structure and properties of atoms and molecules at coverages of one monolayer or less
often differ from their bulk behaviour. Scanning tunneling microscopy and density functional …
often differ from their bulk behaviour. Scanning tunneling microscopy and density functional …
ニューラルネットワークポテンシャルを用いた Ag 吸着 Si (001) 表面の構造の解析: Ag 薄膜成長初期過程の解析に向けて
森下広隆， 清水康司， 南谷英美， 渡邉聡 - 日本表面真空学会学術講演 …, 2019 - jstage.jst.go.jp
抄録 電気抵抗の低さから半導体デバイス等への応用が期待される Ag だが, Si (001)
上の成長初期過程には不明点が残る. その微視的素過程の解明に向け, 本研究では密度汎関数法 …
上の成長初期過程には不明点が残る. その微視的素過程の解明に向け, 本研究では密度汎関数法 …