Reliability studies on bipolar transistors under different particles radiation
The reliability of silicon bipolar junction transistors (Si BJTs) and silicon germanium
heterojunction bipolar transistors (SiGe HBTs) were studied under 80 MeV nitrogen (N 6+) …
heterojunction bipolar transistors (SiGe HBTs) were studied under 80 MeV nitrogen (N 6+) …
60Co gamma radiation effects on NPN transistor at cryogenic temperature
D Muddubasavanna, A Anjum… - Radiation Protection …, 2024 - academic.oup.com
The 60Co gamma radiation effects on the DC electrical characteristics of silicon NPN
transistor were studied in the dose range of 100 krad to 6 Mrad at room temperature (300 K) …
transistor were studied in the dose range of 100 krad to 6 Mrad at room temperature (300 K) …
Experimental investigation of the effects of reactor neutron-gamma pulse irradiation on SiGe HBTs under different bias conditions
Z Li, S Liu, C Song, N Han, MA Adekoya - IEEE Access, 2021 - ieeexplore.ieee.org
The degradation characteristics of silicon-germanium heterojunction bipolar transistors
(SiGe HBTs) under different bias modes (forward, cutoff and saturation) during irradiation …
(SiGe HBTs) under different bias modes (forward, cutoff and saturation) during irradiation …
[HTML][HTML] A novel radiation-dependence model of InP HBTs including gamma radiation effects
J Zhang, H Cai, N Li, L Zhang, M Liu, S Yang - Nuclear Engineering and …, 2023 - Elsevier
In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and
related circuits in the space radiation environment, a novel model including gamma …
related circuits in the space radiation environment, a novel model including gamma …
50áMeV lithium ion irradiation studies on silicon-germanium heterojunction bipolar transistors at low temperature
Total dose effects of 50áMeV lithium ions irradiation on 200GHz silicon-germanium
heterojunction bipolar transistors (SiGe HBT) in the dose ranging from 1 to 30áMrad were …
heterojunction bipolar transistors (SiGe HBT) in the dose ranging from 1 to 30áMrad were …
The effect of electrical stress and thermal annealing on swift heavy ion irradiated SiGe HBTs
The nano-engineered silicon–germanium heterojunction bipolar transistors (SiGe HBTs)
were irradiated with 100 MeV phosphorous ions up to a high total dose of 100 Mrad. The …
were irradiated with 100 MeV phosphorous ions up to a high total dose of 100 Mrad. The …
The dependence of proton energy on the parametric degradation in silicon bipolar junction transistors
The effects of high total dose proton irradiation on the reliability of silicon NPN rf power
bipolar junction transistor (BJT) were examined by subjecting to 1, 3, and 5 MeV protons in …
bipolar junction transistor (BJT) were examined by subjecting to 1, 3, and 5 MeV protons in …
Impact of Ge profiles on neutron-induced displacement damage effect in SiGe HBT
JN Wei, XJ Fu, X Du, PJ Zhang, T Luo… - 2022 IEEE 16th …, 2022 - ieeexplore.ieee.org
The impact of Ge profiles on neutron-induced displacement damage effect in SiGe HBT is
investigated by calibrated three-dimensional TCAD simulation. With the same integrated Ge …
investigated by calibrated three-dimensional TCAD simulation. With the same integrated Ge …