This work reviews different types of surface structures formed on selectively etched GaN
substrates for surface-enhanced Raman scattering (SERS) measurements. A one-to-one …

Gallium nitride (GaN) is the key material for the fabrication of blue and white light emitting
diodes (LEDs). Etching of this material is applied to improve the light extraction efficiency of …

In this work, we propose to reveal the subsurface damage (SSD) of 4H-SiC wafers by photo-
chemical etching and identify the nature of SSD by molten-alkali etching. Under UV …

Since its inception, LEDs have slowly transitioned from traditional solid‐state lighting
applications to full‐color, self‐emissive displays. Micro‐LEDs (µLEDs) are poised to become …

Surface polarity plays a significant role in chemical etching of GaN in KOH solution, a
process that is important for quality control and device fabrication. In this work, basic …

Electrochemical etching has been proven to be a highly effective method for the removal of
GaN materials. In this work, the material removal mechanisms in electrochemical-enhanced …

Abstract 4H silicon carbide (4H-SiC) is one of the most promising candidates in high-power
and high-frequency devices, owing to its excellent properties such as wide bandgap, high …

This study reports a scalable process for the direct-write graphene resistors via a CO 2 laser
to irradiate a spin-coated aromatic polyimide (PI) thin film on top of the glass substrate. With …

Defect-selective etching methods are commonly used for a quick assessment of
crystallographic and chemical inhomogeneities in various semiconductors, including …

GaN and related semiconductors have become an increasingly prominent material for a
wide range of active and passive devices from optoelectronics to high frequency and power …