Porous crystalline materials for memories and neuromorphic computing systems
G Ding, JY Zhao, K Zhou, Q Zheng, ST Han… - Chemical Society …, 2023 - pubs.rsc.org
Porous crystalline materials usually include metal–organic frameworks (MOFs), covalent
organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites …
organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites …
High-performance metal halide perovskite transistors
Advances in metal halide perovskite semiconductors for optoelectronic devices have revived
research interest in their applicability in transistors. Despite initial challenges affecting …
research interest in their applicability in transistors. Despite initial challenges affecting …
Tin perovskite transistors and complementary circuits based on A-site cation engineering
Tin halide perovskites have the general chemical formula ASnX3, where A is a monovalent
cation and X is a monovalent halide anion. These semiconducting materials can be used to …
cation and X is a monovalent halide anion. These semiconducting materials can be used to …
Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
Three-dimensional integrated metal-oxide transistors
The monolithic three-dimensional vertical integration of thin-film transistor (TFT)
technologies could be used to create high-density, energy-efficient and low-cost integrated …
technologies could be used to create high-density, energy-efficient and low-cost integrated …
Thin-film transistors for large-area electronics
Thin-film transistors (TFTs) are a key technology in large-area electronics and can be
manufactured uniformly over large areas—on glass or flexible substrates—at lower …
manufactured uniformly over large areas—on glass or flexible substrates—at lower …
Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook
HM Kim, DG Kim, YS Kim, M Kim… - International Journal of …, 2023 - iopscience.iop.org
Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …
semiconductors has grown. They offer high mobility, low off-current, low process …
extremely thin amorphous indium oxide transistors
Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …
panels for upward of a decade, and have recently been considered as promising back‐end …
Thermally activated defect engineering for highly stable and uniform ALD-amorphous IGZO TFTs with high-temperature compatibility
DG Kim, WB Lee, S Lee, J Koh, B Kuh… - ACS Applied Materials …, 2023 - ACS Publications
Highly stable IGZO thin-film transistors derived from atomic layer deposition are crucial for
the semiconductor industry. However, unavoidable defect generation during high …
the semiconductor industry. However, unavoidable defect generation during high …
Vacuum-free liquid-metal-printed 2D indium–tin oxide thin-film transistor for oxide inverters
A cost-effective, vacuum-free, liquid-metal-printed two-dimensional (2D)(∼ 1.9 nm-thick) tin-
doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process …
doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process …