Advanced 3D Through-Si-Via and Solder Bum** Technology: A Review
YJ Jang, A Sharma, JP Jung - Materials, 2023 - mdpi.com
Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for
achieving high-density integration, high-speed connectivity, and for downsizing of electronic …
achieving high-density integration, high-speed connectivity, and for downsizing of electronic …
Through-silicon via stress characteristics and reliability impact on 3D integrated circuits
Three-dimensional (3D) integration has emerged as a potential solution to the wiring limits
imposed on chip performance, power dissipation, and packaging form factor beyond the 14 …
imposed on chip performance, power dissipation, and packaging form factor beyond the 14 …
[BOOK][B] Developments in Photoelasticity: A renaissance
K Ramesh - 2021 - iopscience.iop.org
In recent years, the field of digital photoelasticity has begun to stabilise. Developments in
Photoelasticity presents, in one volume, the time-tested advancements that have brought …
Photoelasticity presents, in one volume, the time-tested advancements that have brought …
Effect of thermal stresses on carrier mobility and keep-out zone around through-silicon vias for 3-D integration
Three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an
effective solution to overcome the wiring limit imposed on device density and performance …
effective solution to overcome the wiring limit imposed on device density and performance …
A detailed failure analysis examination of the effect of thermal cycling on Cu TSV reliability
C Okoro, JW Lau, F Golshany… - … on Electron Devices, 2013 - ieeexplore.ieee.org
In this paper, the reliability of through-silicon via (TSV) daisy chains under thermal cycling
conditions was examined. The electrical resistance of TSV daisy chains was found to …
conditions was examined. The electrical resistance of TSV daisy chains was found to …
Impact of post-plating anneal and through-silicon via dimensions on Cu pum**
Irreversible extrusion of Cu from through-silicon vias (TSVs) during high-temperature
processing steps presents an important potential back-end-of-line (BEOL) reliability issue …
processing steps presents an important potential back-end-of-line (BEOL) reliability issue …
Correlation between Cu microstructure and TSV Cu pum**
Cu pum** is the irreversible extrusion of Cu from Cu-filled through-silicon vias (TSVs)
exposed to high temperatures during back-end of line (BEOL) processing. The distribution of …
exposed to high temperatures during back-end of line (BEOL) processing. The distribution of …