A review on heterogeneous photocatalytic materials: Mechanism, perspectives, and environmental and energy sustainability applications

AS Morshedy, EM El-Fawal, T Zaki… - Inorganic Chemistry …, 2024 - Elsevier
Nano-energetic semiconductor-based photocatalysis has attracted a lot of consideration due
to its capability to use solar energy to generate solar fuels, such as hydrogen and …

Progress and perspectives on electron-doped cuprates

NP Armitage, P Fournier, RL Greene - Reviews of Modern Physics, 2010 - APS
Although the vast majority of high-T c cuprate superconductors are hole-doped, a small
family of electron-doped compounds exists. Underinvestigated until recently, there has been …

When group-III nitrides go infrared: New properties and perspectives

J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

[SÁCH][B] Dopants and defects in semiconductors

MD McCluskey, EE Haller - 2018 - books.google.com
Praise for the First Edition" The book goes beyond the usual textbook in that it provides more
specific examples of real-world defect physics... an easy reading, broad introductory …

Microscopic origins of surface states on nitride surfaces

CG Van de Walle, D Segev - Journal of Applied Physics, 2007 - pubs.aip.org
Microscopic origins of surface states on nitride surfacesa) | Journal of Applied Physics | AIP
Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt Text Close Publishers AIP …

Finite element simulations of compositionally graded InGaN solar cells

GF Brown, JW Ager III, W Walukiewicz, J Wu - Solar Energy Materials and …, 2010 - Elsevier
The solar power conversion efficiency of compositionally graded InxGa1− xN solar cells was
simulated using a finite element approach. Incorporating a compositionally graded region on …

Structure and electronic properties of InN and In-rich group III-nitride alloys

W Walukiewicz, JW Ager, KM Yu… - Journal of Physics D …, 2006 - iopscience.iop.org
The experimental study of InN and In-rich InGaN by a number of structural, optical and
electrical methods is reviewed. Recent advances in thin film growth have produced single …

Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

YH Li, A Walsh, S Chen, WJ Yin, JH Yang, J Li… - Applied Physics …, 2009 - pubs.aip.org
Using an all-electron band structure approach, we have systematically calculated the natural
band offsets between all group IV, III-V, and II-VI semiconductor compounds, taking into …

Single‐InN‐nanowire nanogenerator with upto 1 V output voltage

CT Huang, J Song, CM Tsai, WF Lee… - Advanced …, 2010 - Wiley Online Library
Renewable and green energy sources would be viable candidates to meet world's energy
demands.[1, 2] At present, solar cells,[3–5] thermoelectric modules,[6, 7] and hydrogen fuel …

Evidence for -Type Do** of InN

RE Jones, KM Yu, SX Li, W Walukiewicz, JW Ager… - Physical Review Letters, 2006 - APS
The first evidence of successful p-type do** of InN is presented. It is shown that InN∶ Mg
films consist of ap-type bulk region with a thin n-type inversion layer at the surface that …