Fundamental properties of 2D excitons bound to single stacking faults in GaAs

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Optical visualization of radiative recombination at partial dislocations in GaAs

T Karin, X Linpeng, AK Rai, A Ludwig… - 2016 IEEE 43rd …, 2016 - ieeexplore.ieee.org
Individual dislocations in an ultra-pure GaAs epi-layer are investigated with spatially and
spectrally resolved photoluminescence imaging at 5 K. We find that some dislocations act as …
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[引用][C] Stacking faults as a novel 2D potential for excitons

KMC Fu, T Karin, X Linpeng, MM Glazov… - CLEO …, 2016 - opg.optica.org
Stacking Faults as a Novel 2D Potential for Excitons Page 1 FW1N.2.pdf CLEO:2016 © OSA
2016 Stacking Faults as a Novel 2D Potential for Excitons Kai-Mei C. Fu1,4, Todd Karin1, **ayu …
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