The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …

A capped thin-film diamond heat spreader is modeled for the reinforcement of hotspot
cooling in the application of pulse-operated GaN-based high-electron mobility transistors …

Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates
for next-generation power conversion and radio frequency (RF) applications. Al x Ga 1-x N …

Researchers have been extensively studying wide-bandgap (WBG) semiconductor
materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size …

Featuring broadband operation and high efficiency, gallium nitride (GaN)-based radio
frequency (RF) power amplifiers are key components to realize the next generation mobile …

The demand for high power and high-frequency radio frequency (RF) power amplifiers
makes AlGaN/GaN high electron mobility transistors (HEMTs) an attractive option due to …

To meet the demands for device miniaturization and enhanced performance capabilities,
new material systems and devices are constantly being investigated with implications for a …

Gallium nitride (GaN) high-electron-mobility-transistors (HEMTs) are designed to operate at
increasing higher power density and frequency to suit specific applications in 5G …

Continuous push towards semiconductor devices with smaller size and higher performance
have led to the maturation of silicon (Si)-electronics in an astounding speed during the last …

Aluminum gallium nitride (AlGaN) high elec-tron mobility transistors (HEMTs) are candidates
for nextgeneration power conversion and radio frequency (RF) applications. AlxGa1− xN …