Abstract Inexpensive, easy-to-process, light-weight polymer-based materials that are
biocompatible, mechanically flexible, and optically transparent have emerged as …

The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐
power devices. However, it is a big challenge to grow GaN on diamond due to the large …

Diamond/Si junctions have been achieved by surface activated bonding method without any
chemical and heating treatments. Bonded interfaces were obtained that were free from voids …

Silicon-based integrated systems are actively pursued for sensing and imaging applications.
A major challenge to realize highly sensitive systems is the integration of electronic, optical …

Diamond/Si bonding interface with an entire contact area and high thermal stability is
achieved by surface activated bonding method. The fabrication of diamond field-effect …

From transmission electron microscope (TEM) observation, a 25 nm thick amorphous layer
was confirmed at the diamond/Si bonding interface without annealing, the amorphous layer …

The effects of thermal annealing process on the interface in p+-Si/n-SiC heterojunctions
fabricated by using surface-activated bonding are investigated. It is found by measuring their …

The electrical properties of p-GaAs/n+-Si, p+-Si/n-GaAs, p+-GaAs/n+-Si, p+-Si/n+-GaAs, n+-
Si/n+-GaAs, and p+-Si/p+-GaAs junctions fabricated by surface-activated bonding (SAB) …

In this paper, a review of surface-activation-based nanobonding technology for packaging
and integration is presented. In this paper, the focus will be on nanobonding technology for …

Fast atom beam activated direct wafer bonds can be used to combine GaAs and Si
semiconductor structures and to achieve high bond strength and optical transparency. Some …