Synaptic devices, including synaptic memristor and synaptic transistor, are emerging
nanoelectronic devices, which are expected to subvert traditional data storage and …

The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …

Among the different types of multiferroic compounds, bismuth ferrite (BiFeO 3; BFO) stands
out because it is perhaps the only one being simultaneously magnetic and strongly …

Resistive random access memory would be an important component of microelectronics in
the era of big data storage due to its efficient characteristics such as low cost, fast operating …

Semi-metals present unique transport properties due to their distinctive band structures and
topological properties, leading to an emergence of semi-metal-based electronic …

Memristors enter a critical developmental stage where emerging large‐scale integration
methods face major challenges with severe switching instabilities in the oxide layer. Here …

The rapid increase in CPU processing speeds has significantly advanced artificial
intelligence, yet it has also exacerbated the disparity in CPU utilization and data throughput …

The functionalities and applications of oxide thin films are highly dependent on their
thickness. Most thickness‐dependent studies on oxide thin films require the preparation of …

Abstract Bismuth ferrite (BiFeO 3, BFO) thin films of various thickness were deposited using
spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films …

This study presents a resistive random-access memory (RRAM) based on silver niobate
(AgNbO 3) perovskite films prepared via sputtering for the first time. The device exhibits a …