Terahertz electronic devices
The frequency band of the electromagnetic spectrum between microwaves and infrared is
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
Compact terahertz SPICE/ADS model
X Liu, T Ytterdal, VY Kachorovskii… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
We describe a compact terahertz (THz) SPICE/advanced design system (ADS) model based
on the extended Enz-Krummenacher-Vittoz (EKV) MOSFET model with channel …
on the extended Enz-Krummenacher-Vittoz (EKV) MOSFET model with channel …
Compact terahertz SPICE model: Effects of drude inductance and leakage
X Liu, K Dovidenko, J Park, T Ytterdal… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
We describe an improved compact SPICE/ADS model validated for the terahertz (THz)
frequency range in a large dynamic range. The model validation was done by comparing the …
frequency range in a large dynamic range. The model validation was done by comparing the …
Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals
A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A
fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz …
fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz …
TCAD model for TeraFET detectors operating in a large dynamic range
Technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and
silicon-on-insulator (SOI) TeraFETs are in good agreement with the measured current …
silicon-on-insulator (SOI) TeraFETs are in good agreement with the measured current …
Terahertz current oscillations in a gated two-dimensional electron gas with antenna integrated at the channel ends
We studied terahertz current oscillations induced by a frequency-tunable radiation source in
a AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor channel. A planar antenna …
a AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor channel. A planar antenna …
Enhancing the catalytic desulfurization capacity of CuO-LaCoO3 using two dielectric barrier discharge configurations
Z Ning, R Hu, R Zhu, S Gong, Z Yang, L Tang - Molecular Catalysis, 2022 - Elsevier
Develo** efficient and economical methods to treat low concentrations of sulfur dioxide,
which is commonly found in electrolytic aluminum flue gas and is typically emitted directly to …
which is commonly found in electrolytic aluminum flue gas and is typically emitted directly to …
External excitation of hybrid plasma resonances in a gated semiconductor slab: An analytical study
We derive at first-order the carrier and velocity conservation equations and a pseudo-2D
(P2D) Poisson equation in order to obtain an analytical model suitable for the study of the …
(P2D) Poisson equation in order to obtain an analytical model suitable for the study of the …
Investigation of high-frequency small-signal characteristics of FETs/HEMTs
E Starikov, P Shiktorov… - … Science and Technology, 2012 - iopscience.iop.org
Hydrodynamic calculations of the components of small-signal admittance and impedance
matrix are performed for InGaAs HEMT. Modifications of high-frequency small-signal …
matrix are performed for InGaAs HEMT. Modifications of high-frequency small-signal …
Response of plasmonic terahertz detectors to amplitude modulated signals
G Rupper, S Rudin, M Shur - Solid-State Electronics, 2015 - Elsevier
We present theoretical study of the response of two-dimensional gated electron gas to an
amplitude modulated signals with carrier frequency in the terahertz range. The model is …
amplitude modulated signals with carrier frequency in the terahertz range. The model is …