Nitrogen impurities form complexes with native defects such as vacancies and self-
interstitials in silicon which are stable to high temperatures. These complexes can then …

Local density functional calculations are carried out on models of tri-and tetra-self-interstitial
clusters in Si. Electrical levels and local vibrational modes (LVMs) of the defects are found …

The combination of long-time, tight-binding molecular dynamics and real-time
multiresolution analysis techniques reveals the complexity of small silicon interstitial defects …

First-principles methods are used to investigate the self-interstitial and its aggregates in
diamond. The experimental assignment of the spin-1 R 2 EPR center to the single interstitial …

Trends in the growth of extended interstitial defects are extracted from extensive tight-
binding and ab inito local density approximation simulations. With an increasing number of …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Ab initio molecular-dynamics simulations of self-interstitial clusters in Si show that I 2 and the
most stable of the I 3 (“I 3 a”) clusters diffuse extremely fast. In these clusters, the I's share a …

▪ Abstract Vacancies and self-interstitial defects in silicon are here investigated by means of
semi-empirical quantum molecular dynamics simulations performed within the tight-binding …

Implantation damage plays an important role in silicon device manufacturing since, eg, it
causes transient enhanced diffusion and influences the activation of dopants. Many studies …

Fission times of uraniumlike nuclei with excitation energies up to about 250 MeV have been
inferred from blocking effects in a single crystal. They are found longer by at least 1 order of …