We report on the current properties of Al 1− x In x N (x≈ 0.18) layers lattice-matched (LM) to
GaN and their specific use to realize nearly strain-free structures for photonic and electronic …

In this paper, we review and discuss the recent advances in InN‐based solar cells. Before
the discussion on InN‐based solar cells, two major losses in a solar cell, transparency loss …

In order to determine the reverse-bias leakage current mechanisms in Schottky diodes on Al
0.83 In 0.17 N/AlN/GaN heterostructures, the temperature-dependent current-voltage …

High electron mobility was achieved in Al 1− x In x N∕ Al N∕ Ga N (x= 0.20–0.12)
heterostructure field effect transistors (HFETs) grown by metal-organic chemical vapor …

Group III nitrides are attracting considerable attention as promising materials for a variety of
applications due to their wide bandgap, high electron mobility, high thermal stability, and …

The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density
AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The …

The scattering mechanisms governing the transport properties of high mobility
AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN …

Recent advances in microelectromechanical systems often require multifunctional materials,
which are designed so as to optimize more than one property. Using density functional …

Al 1− x In x N layers with an indium content between x= 10.5% and x= 24% were grown by
metal-organic vapor-phase epitaxy and characterized concerning their optical, structural and …

We systematically study the origins and mechanisms for unintentional incorporation of
gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto …