High ambipolar mobility in cubic boron arsenide
Semiconductors with high thermal conductivity and electron-hole mobility are of great
importance for electronic and photonic devices as well as for fundamental studies. Among …
importance for electronic and photonic devices as well as for fundamental studies. Among …
High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy
Semiconducting cubic boron arsenide (c-BAs) has been predicted to have carrier mobility of
1400 square centimeters per volt-second for electrons and 2100 square centimeters per volt …
1400 square centimeters per volt-second for electrons and 2100 square centimeters per volt …
High thermal conductivity in boron arsenide: from prediction to reality
Modern first‐principles calculations predict that the thermal conductivity of boron arsenide is
second only to that of diamond, the best thermal conductor, which may be of benefit for …
second only to that of diamond, the best thermal conductor, which may be of benefit for …
Idealizing Tauc plot for accurate bandgap determination of semiconductor with ultraviolet–visible spectroscopy: a case study for cubic boron arsenide
The Tauc plot is widely used to determine the bandgap of semiconductors, but the actual
plot often exhibits significant baseline absorption below the expected bandgap, leading to …
plot often exhibits significant baseline absorption below the expected bandgap, leading to …
Investigation of effects of interlayer interaction and biaxial strain on the phonon dispersion and dielectric response of hexagonal boron arsenide
In this study, the effects of interlayer interaction and biaxial strain on the electronic structure,
phonon dispersion and optical properties of monolayer and bilayer BAs are studied, using …
phonon dispersion and optical properties of monolayer and bilayer BAs are studied, using …
Highly Thermal-Conductive Cubic Boron Arsenide: Single-Crystal Growth, Properties, and Future Thin-Film Epitaxy
Heat dissipation has become a critical challenge in modern electronics, driving the need for
a revolution in thermal management strategies beyond traditional packaging materials …
a revolution in thermal management strategies beyond traditional packaging materials …
Basic physical properties of cubic boron arsenide
Cubic boron arsenide (BAs) is an emerging semiconductor material with a record-high
thermal conductivity subject to intensive research interest for its applications in electronics …
thermal conductivity subject to intensive research interest for its applications in electronics …
Room-temperature wavelike exciton transport in a van der Waals superatomic semiconductor
JA Tulyagankhodjaev, P Shih, J Yu, JC Russell… - Science, 2023 - science.org
The transport of energy and information in semiconductors is limited by scattering between
electronic carriers and lattice phonons, resulting in diffusive and lossy transport that curtails …
electronic carriers and lattice phonons, resulting in diffusive and lossy transport that curtails …
[HTML][HTML] Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-
efficient power-electronics devices. Their wider band gaps result in higher breakdown …
efficient power-electronics devices. Their wider band gaps result in higher breakdown …
Vacancy-induced phonon localization in boron arsenide using a unified neural network interatomic potential
Boron arsenide, considered an ideal semiconductor, inevitably introduces arsenic defects
during crystal growth. Here, we develop a unified neural network interatomic potential with …
during crystal growth. Here, we develop a unified neural network interatomic potential with …