Combining freestanding ferroelectric perovskite oxides with two-dimensional semiconductors for high performance transistors

S Puebla, T Pucher, V Rouco, G Sanchez-Santolino… - Nano Letters, 2022 - ACS Publications
We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a
thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate …

[HTML][HTML] Multifunctional indium selenide devices based on van der Waals contacts: High-quality Schottky diodes and optoelectronic memories

Q Zhao, P Chen, D Zheng, T Wang… - Nano Energy, 2023 - Elsevier
Van der Waals semiconductors, with ultrathin body thickness and dangling-bond-free
surfaces, have been employed to fabricate a vast range of electronic and optoelectronic …

Solvent-free fabrication of broadband WS2 photodetectors on paper

W Zhang, O Çakıroğlu, A Al-Enizi, A Nafady… - Opto-Electronic …, 2023 - digital.csic.es
Paper-based devices have attracted extensive attention due to the growing demand for
disposable flexible electronics. Herein, we integrate semiconducting devices on cellulose …

Water sensitivity of heteroepitaxial Cu-MOF films: dissolution and re-crystallization of 3D-oriented MOF superstructures

LA Brandner, M Linares-Moreau, G Zhou… - Chemical …, 2023 - pubs.rsc.org
3D-oriented metal–organic framework (MOF) films and patterns have recently emerged as
promising platforms for sensing and photonic applications. These oriented polycrystalline …

Giant piezoresistive effect and strong bandgap tunability in ultrathin InSe upon biaxial strain

Q Zhao, T Wang, R Frisenda… - Advanced …, 2020 - Wiley Online Library
The ultrathin nature and dangling bonds free surface of 2D semiconductors allow for
significant modifications of their bandgap through strain engineering. Here, thin InSe …

Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices

P Bastante, T Pucher, A Castellanos-Gomez - Nanotechnology, 2024 - iopscience.iop.org
Two-dimensional semiconducting materials such as MoS 2 have gained significant attention
for potential applications in electronic components due to their reduced dimensionality and …

Fiber-coupled light-emitting diodes (LEDs) as safe and convenient light sources for the characterization of optoelectronic devices

J Quereda, Q Zhao, E Diez, R Frisenda… - Open Research …, 2022 - pmc.ncbi.nlm.nih.gov
Optoelectronic device characterization requires to probe the electrical transport changes
upon illumination with light of different incident powers, wavelengths, and modulation …

Defects and Vacancies Effects on the Optoelectronic Properties of Two-Dimensional Nanomaterials

SJ Mofokeng, TP Mokoena, MB Chabalala… - … for Environmental and …, 2024 - taylorfrancis.com
The chapter discussed the 2D nanomaterials that are widely investigated for optoelectronic
device applications due to their rich structures, electrical and optoelectronic properties …

Integrating van der Waals materials-based devices on paper for electronics and optoelectronics

W Zhang - 2022 - digital.csic.es
In addition to their use in electronic devices, the abrasion-induced deposited vdW films
present impressive applications in optoelectronic devices. Chapter 5 demonstrates a …

InSe Crystals Obtained by Stoichiometric Fusion for Optoelectronic Device Application

M Aitzhanov, N Guseinov, R Nemkayeva, Z Tolepov… - 2021 - essuir.sumdu.edu.ua
Indium selenide (InSe) crystals have attracted great attention in recent years because of
rather high carrier mobility and wide tunability of the band gap which gives an opportunity to …