The linear optical properties of a multi-shell spherical quantum dot of a parabolic confinement for cases with and without a hydrogenic impurity
Throughout this work, we aim to explore the linear optical properties of a semiconductor
multi-shell spherical quantum dot with and without a hydrogenic donor impurity. The core …
multi-shell spherical quantum dot with and without a hydrogenic donor impurity. The core …
Memristive behavior in a junctionless flash memory cell
We report charge storage based memristive operation of a junctionless thin film flash
memory cell when it is operated as a two terminal device by grounding the gate. Unlike …
memory cell when it is operated as a two terminal device by grounding the gate. Unlike …
Synthesis of SixGe1–x Nanocrystals Using Hydrogen Silsesquioxane and Soluble Germanium Diiodide Complexes
We report an investigation into the formation of Si x Ge1–x alloy nanocrystals (64< x< 100)
synthesized from mixing GeI2: PR3 adducts with hydrogen silsesquioxane (HSQ). The use …
synthesized from mixing GeI2: PR3 adducts with hydrogen silsesquioxane (HSQ). The use …
Phase separation in SiGe nanocrystals embedded in SiO2 matrix during high temperature annealing
SiGe nanocrystals have been formed in SiO 2 matrix by cosputtering Si, Ge, and SiO 2
independently on Si substrate. Effects of the annealing time and temperature on structural …
independently on Si substrate. Effects of the annealing time and temperature on structural …
Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure
Ge nanocrystals (nc-Ge) embedded in the gate oxide of the nonvolatile memory structure
were synthesized by Ge ion implantation followed by thermal annealing at 800 C for various …
were synthesized by Ge ion implantation followed by thermal annealing at 800 C for various …
Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions
SG Cherkova, VA Volodin, VA Skuratov, M Stoffel… - Journal of …, 2019 - Elsevier
Germanium suboxide films and GeO/SiO 2 multilayer heterostructures deposited onto Si
(001) substrates using evaporation in high vacuum were modified using irradiation of 167 …
(001) substrates using evaporation in high vacuum were modified using irradiation of 167 …
Effect of annealing on SiOx-TiO2 axial heterostructure nanowires and improved photodetection
Glancing angle deposition technique has been used to synthesize the axial heterostructure
SiO x-TiO 2 nanowires (NWs) on the Si substrate. The field emission gun scanning electron …
SiO x-TiO 2 nanowires (NWs) on the Si substrate. The field emission gun scanning electron …
Nanocrystal non-volatile memory devices
ZJ Horváth, P Basa - Materials Science Forum, 2009 - Trans Tech Publ
Nanocrystal Non-Volatile Memory Devices Page 1 Nanocrystal non-volatile memory devices Zs.
J. Horváth a and P. Basa b Hungarian Academy of Sciences, Research Institute for Technical …
J. Horváth a and P. Basa b Hungarian Academy of Sciences, Research Institute for Technical …
Stress evolution of Ge nanocrystals in dielectric matrices
Abstract Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide
and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor …
and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor …
Effects influencing electron and hole retention times in Ge nanocrystal memory structures operating in the direct tunneling regime
R Peibst, M Erenburg, E Bugiel… - Journal of Applied …, 2010 - pubs.aip.org
We present an experimental study of the electron and hole charging and discharging
processes in the direct tunneling regime of Ge nanocrystals (NCs) embedded in the SiO 2 of …
processes in the direct tunneling regime of Ge nanocrystals (NCs) embedded in the SiO 2 of …