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[PDF][PDF] Current Balancing Strategy for Paralleled SiC MOSFETS in Extremely Low Inductance Regime
In the context of paralleled Silicon Carbide (SiC) dies at low stray inductance, the current
imbalance proves to be exceptionally sensitive to the static parameters of the devices. Even …
imbalance proves to be exceptionally sensitive to the static parameters of the devices. Even …
Temperature Dependent Local Electric Field Transient Analysis and Measurement in High Voltage Power Module Packaging
M Chen, Y Wang, L Fan, Y Ding… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Electrical field (E-field) concentration in the high voltage power module packaging, which is
one of the main causes of packaging failure, is not only highly related to the dielectric …
one of the main causes of packaging failure, is not only highly related to the dielectric …
The Standard Cell SiC Die Embedding High Performance and Scalable Power Electronics Integration Approach
This paper presents a new power electronic packaging approach termed Standard cell,
comprising a step-etched active metal brazed (AMB) substrate and a flexible printed circuit …
comprising a step-etched active metal brazed (AMB) substrate and a flexible printed circuit …