Integrated photonic devices in single crystal diamond

S Mi, M Kiss, T Graziosi, N Quack - Journal of Physics: Photonics, 2020 - iopscience.iop.org
The field of diamond photonics is reviewed, with a focus on recent experimental
demonstrations of photonic integrated devices in a single crystal diamond. This field …

Defect-related etch pits on crystals and their utilization

D Lu, Q Jiang, X Ma, Q Zhang, X Fu, L Fan - Crystals, 2022 - mdpi.com
Etch pits could form on an exposed surface of a crystal when the crystal is exposed to an
etching environment or chemicals. Due to different dissolution rates along various crystalline …

Preparation of a porous boron-doped diamond/Ta electrode for the electrocatalytic degradation of organic pollutants

X Li, H Li, M Li, C Li, D Sun, Y Lei, B Yang - Carbon, 2018 - Elsevier
Polycrystalline boron-doped diamond (BDD) was grown on a Ta substrate by electron-
assisted hot filament chemical vapor deposition, and porous BDD/Ta multilayer films were …

A highly efficient semi-finishing approach for polycrystalline diamond film via plasma-based anisotropic etching

N Liu, L Lei, H Jiang, Y Zhang, J **ao, J Zhang… - Journal of Materials …, 2024 - Elsevier
Plasma anisotropic etching polishing (plasma-AEP), a non-contact polishing method, is
proposed to achieve highly efficient planarization of polycrystalline diamond (PCD) films …

High crystalline quality heteroepitaxial diamond using grid-patterned nucleation and growth on Ir

K Ichikawa, K Kurone, H Kodama, K Suzuki… - Diamond and Related …, 2019 - Elsevier
High crystalline quality heteroepitaxial diamond films were successfully formed by using grid-
patterned growth on Ir with dc plasma CVD. The crystalline qualities were evaluated by X …

Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole.

A Tallaire, O Brinza, V Mille, L William… - … (Deerfield Beach, Fla.), 2017 - europepmc.org
A low-dislocation diamond is obtained by homoepitaxial chemical vapor deposition on a
standard moderate-quality substrate hollowed out by a large square hole. Dislocations are …

Surface etching evolution of mechanically polished single crystal diamond with subsurface cleavage in microwave hydrogen plasma: Topography, state and electrical …

Y Zheng, Y Jia, J Liu, J Wei, L Chen, K An, X Yan… - Vacuum, 2022 - Elsevier
Surface etching of single-crystal diamond (SCD) in hydrogen plasma plays a decisive role
for high-quality homoepitaxy and surface conduction of diamond. The complexity of …

[HTML][HTML] Plasma etching of wide bandgap and ultrawide bandgap semiconductors

SJ Pearton, EA Douglas, RJ Shul, F Ren - Journal of Vacuum Science …, 2020 - pubs.aip.org
The precise patterning of front-side mesas, backside vias, and selective removal of ternary
alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN …

Identification of dislocations in synthetic chemically vapor deposited diamond single crystals

A Tallaire, T Ouisse, A Lantreibecq, R Cours… - Crystal Growth & …, 2016 - ACS Publications
High purity chemically vapor deposited (CVD) diamond single crystals are now widely
available. However, the reduction of dislocations in this material still remains an important …

Two extreme crystal size scales of diamonds, large single crystal and nanocrystal diamonds: Synthesis, properties and their mutual transformation

Y Wang, W Wang, S Yang, G Shu, B Dai, J Zhu - New Carbon Materials, 2021 - Elsevier
Diamonds with two extreme sizes, large single crystal and nanocrystalline, have completely
different properties, and have aroused the continuous attention of researchers. Each has its …