This article contains a broad overview of etch process as one of the most important top-down
technologies widely used in semiconductor manufacturing and surface modification of …

The surface morphologies of CaF2 thin films prepared by electron beam evaporation
technique were measured by atomic force microscopy. The films were bombarded by …

Taking the well-understood Cu-Ni {111} semi-coherent interface as a prototype, we
demonstrate an important, yet long-been-overlooked, size effect on the properties of …

Ar+ ion has been used regularly for the cleaning of semiconductor, metal surfaces for
epitaxial nanostructures growth. We have investigated the effect of low-energy Ar+ ion …

The fractal characterizations of amorphized‐silicon (a‐Si) surfaces under low‐energy ion
irradiations are presented. The crystalline Si surfaces have been irradiated with Si ions …

Comprehensive model is developed to study the impact of surface roughness on the angular
dependence of sputtering yield. Instead of assuming surfaces to be flat or composed of exact …

We have studied the influence of substrate surface roughness on the growth of Ge on self-
affine fractal Si surfaces. Self-affine fractal surfaces can be prepared by irradiating surfaces …

This letter presents a study on the influence of the three different etching modes (isotropic,
anisotropic and sputtering) on the dynamics of smoothing of roughed surfaces. Calculations …

The defectivity of extreme ultraviolet (EUV) mask blanks is a critical issue in EUV
lithography. It has been observed that target surfaces can develop many formations that …

The low-energy ion-bombardment induced surface nanotopography and the nanopatterning
of Si has been simulated by atomistic simulations using an approach based on molecular …