Interface charge characteristics in polymer dielectric contacts: analysis of acoustic approach and probe microscopy
L Hu, W Wang, S Yu, D Ma, J Lv… - Advanced Materials …, 2023 - Wiley Online Library
Interfaces are essential components in polymer contact systems, which widely exist in
electronic devices and power equipment. Interface charge originating from the mismatch of …
electronic devices and power equipment. Interface charge originating from the mismatch of …
Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of …
S Ramazanov, F Orudzhev, G Gajiev, V Holcman… - Applied Surface …, 2024 - Elsevier
Abstract A heterostructure BiFeO 3/TiO 2 (Nt) Ti (BFOT) was obtained by the atomic layer
deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an …
deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an …
Temperature dependent space charge and breakdown strength of PP/ULDPE/graphene nanocomposites for HVDC extruded cable insulation
The space charge behavior, conductivity and breakdown strength are critical issues in the
design of insulation for high voltage direct current (HVDC) extruded cables, which is greatly …
design of insulation for high voltage direct current (HVDC) extruded cables, which is greatly …
Electrical tree in HTV silicone rubber with temperature gradient under repetitive pulse voltage
High temperature vulcanized silicone rubber (HTV SIR) is important insulation for high
voltage direct current (HVDC) cable accessories. The pulse voltage in the HVDC system …
voltage direct current (HVDC) cable accessories. The pulse voltage in the HVDC system …
DC breakdown of XLPE modulated by space charge and temperature dependent carrier mobility
S Akram, MS Bhutta, K Zhou, P Meng… - … on Dielectrics and …, 2021 - ieeexplore.ieee.org
In this paper, the dependence of XLPE electrical breakdown on carrier mobility controlled by
both electric field and temperature is evaluated by simulations and experiments. The …
both electric field and temperature is evaluated by simulations and experiments. The …
[HTML][HTML] Temperature and electric field dependence of charge conduction and accumulation in XLPE based on polarization and depolarization current
G Li, X Zhou, C Hao, Q Lei, Y Wei - AIP Advances, 2019 - pubs.aip.org
Temperature and electric field are important factors affecting space charge accumulation in
high voltage dc (HVDC) cable insulation. Charge conduction and accumulation in XLPE …
high voltage dc (HVDC) cable insulation. Charge conduction and accumulation in XLPE …
Effect of charge accumulated at oil–paper interface on parameters considered for power transformer insulation diagnosis
Polarisation and depolarisation current (PDC) measurement and analysis is one of the
popular tools for effective diagnosis of power transformer insulation. Normally, it is assumed …
popular tools for effective diagnosis of power transformer insulation. Normally, it is assumed …
[HTML][HTML] Influence of temperature on charge accumulation in low-density polyethylene based on depolarization current and space charge decay
G Li, J Wang, W Han, Y Wei, S Li - Polymers, 2019 - mdpi.com
Temperature is one of the key factors affecting space charge accumulation in high voltage
direct current (HVDC) cable insulation material. The influence of temperature on charge …
direct current (HVDC) cable insulation material. The influence of temperature on charge …
An Extended-Gate FET-Based pH Sensor With an InZnxOy Membrane Fabricated on a Flexible Polyimide Substrate at Room Temperature
K Singh, JL Her, BS Lou, ST Pang… - IEEE Electron Device …, 2019 - ieeexplore.ieee.org
In this letter, a room-temperature synthesized amorphous indium-zinc oxide (InZn x O y)
sensing membrane on flexible polyimide is employed as an extended-gate field-effect …
sensing membrane on flexible polyimide is employed as an extended-gate field-effect …
Reduced screening of remote phonon scattering in thin-film transistors caused by gate-electrode/gate-dielectric interlayer
YX Ma, WM Tang, PT Lai - Applied Physics Letters, 2020 - pubs.aip.org
Pentacene organic thin-film transistors have been fabricated with their NdTaO gate
dielectrics annealed at 200 C, 400 C, and 800 C to study the effects of remote phonon …
dielectrics annealed at 200 C, 400 C, and 800 C to study the effects of remote phonon …