Power devices based on wide-bandgap material such as silicon carbide (SiC) can operate
at higher switching speeds, higher voltages, and higher temperatures compared to those …

Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …

For solar cells operating under the broad‐band solar spectrum, the photovoltaic conversion
efficiency is fundamentally limited by transmission and thermalization losses. For …

The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10
kV is expected to revolutionize medium-and high-voltage systems. However, present power …

Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching
frequency, fast protection, and thermal management associated with the adoption of 10 kV …

Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

This paper proposes a novel two-level single-stage direct ac-ac converter for realizing a 7.2-
kV medium-voltage (MV) solid-state transformer (SST) based on 15-kV SiC mosfets. A new …

State-of-the-art silicon carbide (SiC) power devices provide superior performance over
silicon devices with much higher switching frequencies/speed and lower losses. High …

Simultaneous over 40-W electric power and optical data transmission using an optical fiber
is demonstrated for optically powered remote antenna units in future mobile communication …

Silicon-carbide (SiC) transistors with growing readiness for the power converter market have
raised an emerging need for high-performance gate driver (GD) units to maximize their …