The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

The memristor is considered as the one of the promising candidates for next generation
computing systems. Novel computing architectures based on memristors have shown great …

Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …

Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …

Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …

The fully memristive neural network consisting of the threshold switching (TS) material‐
based electronic neurons and resistive switching (RS) one‐based synapses shows the …

Designing a transparent carbon nanotube (CNT) gas sensor for nitrogen dioxide (NO2)
detection at room temperature (RT), which is unaffected by humidity, is a critical challenge in …

Higher functionality should be achieved within the device-level switching characteristics to
secure the operational possibility of mixed-signal data processing within a memristive …

An all‐oxide transparent resistive random access memory (T‐RRAM) device based on
hafnium oxide (HfOx) storage layer and indium‐tin oxide (ITO) electrodes is fabricated in this …