Ultrafast photoinduced phase change in SnSe

BJ Dringoli, M Sutton, Z Luo, MG Kanatzidis… - Physical review letters, 2024 - APS
Time-resolved multiterahertz (THz) spectroscopy is used to observe an ultrafast, nonthermal
electronic phase change in SnSe driven by interband photoexcitation with 1.55 eV pump …

Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS 2 and SnSe 2 nanosheets

A Sierra-Castillo, E Haye, S Acosta, R Arenal… - RSC …, 2021 - pubs.rsc.org
Laminated metal dichalcogenides are candidates for different potential applications ranging
from catalysis to nanoelectronics. However, efforts are still needed to optimize synthesis …

Exciton Self‐Trap** Effect in MoSi2N4 for Modulating Nonlinear Optical Process

D Huang, F Liang, R Guo, D Lu, J Wang… - Advanced Optical …, 2023 - Wiley Online Library
Coupling between polarized particles (excitons, phonons, and plasmas) in low‐dimension
semiconductors can produce rich correlated states by exchange of energy and momentum …

Broadband 1T-polytype tantalum disulfide saturable absorber for solid-state bulk lasers

M Wang, H Qiu, T Yang, Z Wang, C Zhao… - Photonics …, 2022 - opg.optica.org
1T-polytype tantalum disulfide (1 T-TaS 2), an emerging strongly correlated material,
features a narrow bandgap of 0.2 eV, bridging the gap between zero-bandgap graphene …

SERS enhancement induced by the Se vacancy defects in ultra-thin hybrid phase SnSex nanosheets

C Chen, W Zhang, P Duan, W Liu, M Shafi, X Hu… - Optics …, 2022 - opg.optica.org
Improving the photo-induced charge transfer (PICT) efficiency by adjusting the energy levels
difference between adsorbed probe molecules and substrate materials is a key factor for …

Ultrafast nonlinear optical response and carrier dynamics in layered gallium sulfide (GaS) single-crystalline thin films

H Lu, Y Chen, K Yang, Y Kuang, Z Li, Y Liu - Frontiers in Materials, 2021 - frontiersin.org
Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently
garnered considerable attention in various fields. In this study, we investigated the nonlinear …

Ultrafast carrier dynamics in SnSe thin film studied by femtosecond transient absorption technique

S Yin, Y Han, T Yan, Q Fu, T Xu, W Wu - Physica B: Condensed Matter, 2021 - Elsevier
The femtosecond transient absorption (TA) technique is used to study the ultrafast carrier
dynamics of SnSe thin film prepared by pulsed laser deposition (PLD), which is basically …

Ultrafast carrier dynamic anisotropy of single crystal rhenium disulfide flake based on transient absorption spectroscopy

X Zhang, L Yan, Y Xu, J Si, X Hou - Optical Engineering, 2023 - spiedigitallibrary.org
In recent years, rhenium disulfide (ReS2) has attracted much attention in polarization
dependent photonic applications due to its anisotropic optoelectronic response. To reveal …

Pulse energy and wavelength-dependent ultrafast dynamics of SnSe2 thin film studied by transient absorption

T Yan, Y Han, Q Fu, T Xu, S Yin, W Wu… - Journal of Physics D …, 2021 - iopscience.iop.org
The ultrafast carrier dynamics in SnSe 2 film and their influencing factors are studied using
femtosecond transient absorption (TA) spectroscopy. Nano-scale SnSe 2 sample films are …

Pulsed laser deposition of ferrite thin films

G Bulai, OF Caltun - Ferrite Nanostructured Magnetic Materials, 2023 - Elsevier
Abstract Properties of ferrite thin films are often found to be different from that of the bulk and
depend very much on the experimental parameters of the deposition technique. Pulsed …