Review of power electronics components at cryogenic temperatures
In order to apply power electronics systems to applications such as superconducting
systems under cryogenic temperatures, it is necessary to investigate the characteristics of …
systems under cryogenic temperatures, it is necessary to investigate the characteristics of …
A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics
Quantum computing (QC) has already entered the industrial landscape and several
multinational corporations have initiated their own research efforts. So far, many of these …
multinational corporations have initiated their own research efforts. So far, many of these …
Theoretical limit of low temperature subthreshold swing in field-effect transistors
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs
that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical …
that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical …
Cryogenic MOS transistor model
This paper presents a physics-based analytical model for the MOS transistor operating
continuously from room temperature down to liquid-helium temperature (4.2 K) from …
continuously from room temperature down to liquid-helium temperature (4.2 K) from …
Characterization and modeling of 28-nm bulk CMOS technology down to 4.2 K
This paper presents an experimental investigation, compact modeling, and low-temperature
physics-based modeling of a commercial 28-nm bulk CMOS technology operating at …
physics-based modeling of a commercial 28-nm bulk CMOS technology operating at …
Physical model of low-temperature to cryogenic threshold voltage in MOSFETs
This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2
K. Interface traps close to the band edge modify the saturating temperature behavior of the …
K. Interface traps close to the band edge modify the saturating temperature behavior of the …
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures
This paper presents an extensive characterization and modeling of a commercial 28-nm
FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic …
FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic …
SiC and GaN devices with cryogenic cooling
This article presents the cryogenically cooled application for wide bandgap (WBG)
semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at …
semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at …
Ultrasteep slope cryogenic FETs based on bilayer graphene
Cryogenic field-effect transistors (FETs) offer great potential for applications, the most
notable example being classical control electronics for quantum information processors. For …
notable example being classical control electronics for quantum information processors. For …
On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature
G Ghibaudo, M Aouad, M Cassé, S Martinie… - Solid-State …, 2020 - Elsevier
A comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with
exponential band tail of states is first proposed. Then, a compact analytical expression for …
exponential band tail of states is first proposed. Then, a compact analytical expression for …