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A review of InP/InAlAs/InGaAs based transistors for high frequency applications
This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …
InP based devices for high speed applications. Over the past few decades, major aero …
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
This work covers the impact of dual metal gate engineered Junctionless MOSFET with
various high-k dielectric in Nanoscale circuits for low power applications. Due to gate …
various high-k dielectric in Nanoscale circuits for low power applications. Due to gate …
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
The outstanding electron transport properties of InGaAs and InAs semiconductor materials,
makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state …
makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state …
Influence of gate and channel engineering on multigate MOSFETs-A review
R Ramesh - Microelectronics journal, 2017 - Elsevier
The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …
as device modeling faces new challenges such as short channel effects and mobility …
Study of analog performance of common source amplifier using rectangular core–shell based double gate junctionless transistor
A new state of the art double gate junctionless transistor (DGJLT) namely the rectangular
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …
20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications
The DC and RF performance of L g= 20 nm enhancement mode (E-Mode) In 0.7 Ga 0.3
As/InAs/In 0.7 Ga 0.3 As composite channel high electron mobility transistor (HEMT) on InP …
As/InAs/In 0.7 Ga 0.3 As composite channel high electron mobility transistor (HEMT) on InP …
Impact of leakage current in germanium channel based DMDG TFET using drain-gate underlap technique
In this work, a dual metal (DM) double-gate (DG) Tunnel Field Effect Transistor (DMDG-
TFET) with drain-gate underlap is proposed to overcome the challenges in conventional …
TFET) with drain-gate underlap is proposed to overcome the challenges in conventional …
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor
In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been
implemented with various high-k dielectric. The leakage current in the device is analysed in …
implemented with various high-k dielectric. The leakage current in the device is analysed in …
Design and Analysis of InP/InAs/AlGaAs Based Cylindrical Surrounding Double-Gate (CSDG) MOSFETs With La2O3 for 5-nm Technology
P Paramasivam, N Gowthaman, VM Srivastava - IEEE Access, 2021 - ieeexplore.ieee.org
The structural improvement and rapid production of InP, InAs (III-V, binary), and AlGaAs (III-
V, ternary) compound semiconductor materials have invariably enabled its utilization in …
V, ternary) compound semiconductor materials have invariably enabled its utilization in …
Investigation of Ge based double gate dual metal tunnel FET novel architecture using various hetero dielectric materials
In this manuscript, Ge based dual metal double gate Tunnel Field Effect Transistor device
has been investigated to overcome the challenges in conventional Si based TFET. This …
has been investigated to overcome the challenges in conventional Si based TFET. This …