The nowadays notable development of all the modern technology, fundamental for the
progress and well being of world society, imposes a great deal of stress in the realm of basic …

In this paper, we present a collection of results focussing on the transport properties of
doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and …

It is described a kinetic theory providing bases for an analytical treatment of nonlinear
quantum transport. It is founded on a nonequilibrium statistical ensemble formalism, which …

We recently published a study concerning femtosecond pump–probe absorption edge
spectroscopy of cubic GaN (fundamental bandgap: 3.23 eV), resulting in the transient …

This communication presents a comparative study on the charge transport (in transient and
steady state) in bulk n-type doped SiC-polytypes: 3 C-SiC, 4 H-SiC and 6 H-SiC. The time …

A study of the mobility of n-doped wurtzite and zincblende ZnS is reported. We have
determined nonequilibrium thermodynamic state of the ZnS—driven far away from …

The case of n-doped direct gap polar semiconductors in the presence of moderate to high
electric fields is considered. The study is centered on the theoretical analysis of the behavior …

A theoretical study on the nonlinear transport of holes and of the nonequilibrium
thermodynamic characteristics of p-doped wurtzite gallium nitride (GaN), aluminium nitride …

An analysis of the influence of geometry and size on the thermal conductivity in
semiconductors, particularized to the study in Si and GaN, is presented. This is done in the …

We have calculated the steady state electron mobility in n-doped zinc sulphide (in WZ and
ZB phases), driven far away from equilibrium by an electric field. The dependence of the …