The rapid progress of the internet of things, cloud computing, and artificial intelligence has
increased demand for high-performance computing. This demand has led to a focused …

The recent discovery of ferroelectric properties in HfO 2 has sparked significant interest in
the fields of nonvolatile memory and neuromorphic computing. Yet, as device scaling …

In this letter, the back-end of line (BEOL) compatible H0. 5Z0. 5O2/ZrO2/H0. 5Z0. 5O2 stack
was designed for enhancing both the ferroelectricity and reliability under low-voltage …

Abstract Hf 0.5 Zr 0.5 O 2 solid solution ferroelectric thin film is an extremely promising
candidate for ferroelectric memories due to the high compatibility with silicon-based …

In this work, the impact of a tungsten oxide (WO3) seed and cap** layer for ferroelectric La-
doped (Hf, Zr) O2 (La: HZO) based capacitors, designed with back-end-of-line (BEOL) …

In this study, we integrated an Indium Gallium Zinc Oxide (IGZO) channel with a superlattice
of HfO 2/ZrO 2 (HZO) under low-thermal-budget microwave annealing to produce nearly …

A nanoscale ferroelectric film with a periodic 4×[HfO2 (10 Å)-ZrO2 (5 Å)] superlattice (HZSL)
structure was prepared with an optimal annealing temperature identified as 500° C to …

This study presents the ferroelectric polarization stability characteristics of ultrathin (6 nm)
superlattice (SL) ferroelectric layer metal-ferroelectric-metal (MFM) capacitors fabricated with …

Despite the extensive research on HfO 2-based thin films, the ferroelectric orthorhombic
phase formation remains unclear. This work proposes a physical picture throughout the …

The sublayer thickness of superlattices, as a key factor affecting lattice integrity, interface
defects, and strain, deserves in-depth studies about its impact on improving ferroelectric …