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[HTML][HTML] Recent progress in physics-based modeling of electromigration in integrated circuit interconnects
The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …
density and better performance but also increases their vulnerability to various aging …
A high-efficiency aging test with new data processing method for semiconductor device
X Yang, Q Sang, J Zhang, C Wang, M Yu… - Microelectronics …, 2023 - Elsevier
The aging test of semiconductor devices plays a crucial role in modeling the degradation
mechanisms. Conventionally, the voltage stress used to accelerate aging is determined by …
mechanisms. Conventionally, the voltage stress used to accelerate aging is determined by …
A physical model for bulk gate insulator trap generation during bias-temperature stress in differently processed p-channel FETs
A deterministic reaction-diffusion–drift model is used for the time kinetics of bulk gate
insulator trap generation in p-channel Field Effect Transistors (FETs) under inversion stress …
insulator trap generation in p-channel Field Effect Transistors (FETs) under inversion stress …
NBTI Effect Survey for Low Power Systems in Ultra-Nanoregime
Kajal, VK Sharma - Current Nanoscience, 2024 - benthamdirect.com
Background: Electronic device scaling with the advancement of technology nodes maintains
the performance of the logic circuits with area benefit. Metal oxide semiconductor (MOS) …
the performance of the logic circuits with area benefit. Metal oxide semiconductor (MOS) …
Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface
M Zheng, W Chen, Y Lyu, H Chen, J Chen… - Microelectronics …, 2023 - Elsevier
As technology nodes continue to shrink, the impact of aging problems on devices has
become increasingly important. One significant aging problem that affects device …
become increasingly important. One significant aging problem that affects device …
A physics-based model for long term data retention characteristics in 3D NAND flash memory
Charge loss mechanisms during Data retention (DR) in GAA 3D NAND devices, Inter-cell
charge loss of electrons in the Charge Trap Layer (CTL), and In-cell charge loss of electrons …
charge loss of electrons in the Charge Trap Layer (CTL), and In-cell charge loss of electrons …
A physical model for long term data retention characteristics in 3D NAND flash memory
Abstract An Activated Barrier Double Well Thermionic Emission (ABDWT) model is used to
simulate long-term Data Retention (DR) in 3D NAND Flash memory cells. The contribution …
simulate long-term Data Retention (DR) in 3D NAND Flash memory cells. The contribution …
Analysis of sheet dimension (W, L) dependence of NBTI in GAA-SNS FETs
Ultra-fast (Iuus delay) measured threshold voltage shift (ΔV T) due to Negative Bias
Temperature Instability (NBTI) in Gate All Around Stacked Nano-Sheet (GAA-SNS) Field …
Temperature Instability (NBTI) in Gate All Around Stacked Nano-Sheet (GAA-SNS) Field …
On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs
In this work, we demonstrate the reliability under PBTI stress of L g= 90 nm SOI n-MOSFETS
incorporating a ferroelectric-antiferroelectric (FE-AFE) 1.8 nm HfO 2-ZrO 2 superlattice (HZH) …
incorporating a ferroelectric-antiferroelectric (FE-AFE) 1.8 nm HfO 2-ZrO 2 superlattice (HZH) …
Aggravated NBTI reliability due to hard-to-detect open defects
G Aguirre, J Gamez, V Champac - Microelectronics Reliability, 2024 - Elsevier
FinFET technology has become an attractive candidate for high-performance and power-
efficient applications. In the other hand, the behavior of FinFET devices is influenced by self …
efficient applications. In the other hand, the behavior of FinFET devices is influenced by self …