A machine learning approach to modeling intrinsic parameter fluctuation of gate-all-around Si nanosheet MOSFETs

R Butola, Y Li, SR Kola - IEEE Access, 2022‏ - ieeexplore.ieee.org
The sensitivity of semiconductor devices to any microscopic perturbation is increasing with
the continuous shrinking of device technology. Even the small fluctuations have become …

Physics-integrated machine learning for efficient design and optimization of a nanoscale carbon nanotube field-effect transistor

G Fan, KL Low - ECS Journal of Solid State Science and …, 2023‏ - iopscience.iop.org
We propose an efficient framework for optimizing the design of Carbon Nanotube Field-
Effect Transistor (CNTFET) through the integration of device physics, machine learning (ML) …

Prediction of device characteristics of feedback field-effect transistors using TCAD-augmented machine learning

S Woo, J Jeon, S Kim - Micromachines, 2023‏ - mdpi.com
In this study, the device characteristics of silicon nanowire feedback field-effect transistors
were predicted using technology computer-aided design (TCAD)-augmented machine …

GatedNN: An accurate deep learning-based parameter extraction for BSIM-CMG

G Guo, Z Tang, Z Cui, C Li, H You - Solid-State Electronics, 2025‏ - Elsevier
An enhanced deep learning (DL)-based parameter extraction method for transistor compact
models, named GatedNN, is introduced. GatedNN achieves significant accuracy …

[PDF][PDF] Prediction methodology for next-generation device characteristics using machine learning

G Gil, S Woo - JOURNAL OF SEMICONDUCTOR TECHNOLOGY …, 2022‏ - journal.auric.kr
In this article, we propose a prediction methodology for next-generation device
characteristics for process design kit (PDK) models that utilize various machine learning …

[PDF][PDF] Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning. Micromachines 2023, 14, 504

S Woo, J Jeon, S Kim - 2023‏ - pdfs.semanticscholar.org
In this study, the device characteristics of silicon nanowire feedback field-effect transistors
were predicted using technology computer-aided design (TCAD)-augmented machine …