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A machine learning approach to modeling intrinsic parameter fluctuation of gate-all-around Si nanosheet MOSFETs
The sensitivity of semiconductor devices to any microscopic perturbation is increasing with
the continuous shrinking of device technology. Even the small fluctuations have become …
the continuous shrinking of device technology. Even the small fluctuations have become …
Physics-integrated machine learning for efficient design and optimization of a nanoscale carbon nanotube field-effect transistor
We propose an efficient framework for optimizing the design of Carbon Nanotube Field-
Effect Transistor (CNTFET) through the integration of device physics, machine learning (ML) …
Effect Transistor (CNTFET) through the integration of device physics, machine learning (ML) …
Prediction of device characteristics of feedback field-effect transistors using TCAD-augmented machine learning
In this study, the device characteristics of silicon nanowire feedback field-effect transistors
were predicted using technology computer-aided design (TCAD)-augmented machine …
were predicted using technology computer-aided design (TCAD)-augmented machine …
GatedNN: An accurate deep learning-based parameter extraction for BSIM-CMG
An enhanced deep learning (DL)-based parameter extraction method for transistor compact
models, named GatedNN, is introduced. GatedNN achieves significant accuracy …
models, named GatedNN, is introduced. GatedNN achieves significant accuracy …
[PDF][PDF] Prediction methodology for next-generation device characteristics using machine learning
In this article, we propose a prediction methodology for next-generation device
characteristics for process design kit (PDK) models that utilize various machine learning …
characteristics for process design kit (PDK) models that utilize various machine learning …
[PDF][PDF] Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning. Micromachines 2023, 14, 504
S Woo, J Jeon, S Kim - 2023 - pdfs.semanticscholar.org
In this study, the device characteristics of silicon nanowire feedback field-effect transistors
were predicted using technology computer-aided design (TCAD)-augmented machine …
were predicted using technology computer-aided design (TCAD)-augmented machine …