[BOOK][B] Molecular beam epitaxy: fundamentals and current status
MA Herman, H Sitter - 2012 - books.google.com
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …
quality semiconductor devices. It discusses the most important aspects of the MBE …
[BOOK][B] Organometallic vapor-phase epitaxy: theory and practice
GB Stringfellow - 1999 - books.google.com
Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for
the production of compound semiconductor materials. It describes how the technique works …
the production of compound semiconductor materials. It describes how the technique works …
Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers
Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
[BOOK][B] Quantum semiconductor structures: fundamentals and applications
C Weisbuch, B Vinter - 2014 - books.google.com
In its original form, this widely acclaimed primer on the fundamentals of quantized
semiconductor structures was published as an introductory chapter in Raymond Dingle's …
semiconductor structures was published as an introductory chapter in Raymond Dingle's …
Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
F Capasso, K Mohammed, A Cho - IEEE Journal of Quantum …, 1986 - ieeexplore.ieee.org
New results on the physics of tunneling in quantum well heterostructures and its device
applications are discussed. Following a general review of the field in the Introduction, in the …
applications are discussed. Following a general review of the field in the Introduction, in the …
Room temperature observation of differential negative resistance in an AlAs/GaAs/AlAs resonant tunneling diode
M Tsuchiya, H Sakaki, J Yoshino - Japanese Journal of Applied …, 1985 - iopscience.iop.org
A resonant tunneling diode having AlAs/GaAs/AlAs double barrier structure is designed to
enhance the resonant tunneling current component and to suppress the excess current …
enhance the resonant tunneling current component and to suppress the excess current …
Semiconductor quantum-well structures for optoelectronics–recent advances and future prospects–
H Okamoto - Japanese journal of applied physics, 1987 - iopscience.iop.org
Due to the quantum size effect, semiconductor quantum-well structure exhibits many unique
material properties which can not be realized in conventional bulk crystals. These unique …
material properties which can not be realized in conventional bulk crystals. These unique …
III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources
In this paper we review the recent studies on wide InGaN quantum wells (QWs). InGaN QWs
are known to suffer from an extremely high built-in piezoelectric polarization, which …
are known to suffer from an extremely high built-in piezoelectric polarization, which …
Current understanding and applications of the RHEED intensity oscillation technique
PJ Dobson, BA Joyce, JH Neave, J Zhang - Journal of Crystal Growth, 1987 - Elsevier
The problem of reflection high energy electron diffraction (RHEED) and electron scattering
from smooth and growing surface is briefly reviewed. Evidence is given that strong electron …
from smooth and growing surface is briefly reviewed. Evidence is given that strong electron …
[BOOK][B] The Handbook of surface imaging and visualization
AT Hubbard - 1995 - api.taylorfrancis.com
This exciting new handbook investigates the characterization of surfaces. It emphasizes
experimental techniques for imaging of solid surfaces and theoretical strategies for …
experimental techniques for imaging of solid surfaces and theoretical strategies for …