Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …

Periodic nanostructures, a group of nanomaterials consisting of single or multiple nano
units/components periodically arranged into ordered patterns (eg, vertical and lateral …

A magnesium delta-doped AlGaN last barrier (MDDLB) was introduced in the structure of
deep ultraviolet light emitting diodes (DUV LEDs) to improve their light output power. The …

A comprehensive analysis of the degradation behavior of (In) AlGaN-based deep-ultraviolet
light-emitting diode (DUV LED) stressed at a constant dc current of 60 mA has been …

AlGaN and GaN sidewalls were turned into Al x Ga2–x O3 and Ga2O3, respectively, by
thermal oxidation to improve the optoelectrical characteristics of deep ultraviolet (DUV) light …

A deep-ultraviolet (DUV) laser diode (LD) consisting of specifically designed cladding layers
involving superlattice nitride alloy has been proposed. Simulation studies of different …

Abstract The Minamata Convention of 2020 mandates the replacement of conventional
mercury UV lamps with deep ultraviolet (DUV) light-emitting diodes (LEDs) emitting at 254 …

Highly efficient hole injection into a AlGaN quantum well is desirable in nitride deep-
ultraviolet light-emitting diodes (DUV LEDs) for high optical performance. In this work, we …