A survey of Gallium Nitride HEMT for RF and high power applications
This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …
suitable for RF and high power applications. It plays a vital role in Wireless communication …
Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration
LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang… - Micromachines, 2021 - mdpi.com
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …
the high-frequency power amplifier to the high voltage devices used in power electronic …
Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications
K Shinohara, DC Regan, Y Tang… - … on Electron Devices, 2013 - ieeexplore.ieee.org
In this paper, we report state-of-the-art high frequency performance of GaN-based high
electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative …
electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative …
High breakdown voltage in RF AlN/GaN/AlN quantum well HEMTs
In evaluating GaN high-electron mobility transistors (HEMTs) for high-power applications, it
is crucial to consider the device-level breakdown characteristics. This letter replaces the …
is crucial to consider the device-level breakdown characteristics. This letter replaces the …
High breakdown voltage and low-current dispersion in AlGaN/GaN HEMTs with high-quality AlN buffer layer
We have successfully grown AlGaN/GaN high electron mobility transistor (HEMT) structure
on the high-quality undoped thick AlN buffer layer with large band offset to replace the …
on the high-quality undoped thick AlN buffer layer with large band offset to replace the …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
InAlN/GaN HEMTs on Si With High of 250 GHz
In this letter, InAlN/GaN high electron mobility transistors (HEMTs) with 40-200 nm
rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si …
rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si …
Nanowire Channel InAlN/GaN HEMTs With High Linearity of and
This letter reports a high linearity InAlN/GaN high-electron-mobility transistor (HEMT) with a
nanowire channel structure. It is found that the increase of source access resistance with …
nanowire channel structure. It is found that the increase of source access resistance with …
Passivation schemes for ScAlN-barrier mm-wave high electron mobility transistors
This article presents improvements of large-signal RF power performance at Ka-band of
gallium nitride high electron mobility transistors (HEMTs) utilizing a scandium aluminum …
gallium nitride high electron mobility transistors (HEMTs) utilizing a scandium aluminum …
[HTML][HTML] Strained GaN quantum-well FETs on single crystal bulk AlN substrates
We report the first realization of molecular beam epitaxy (MBE) grown strained GaN
quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated …
quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated …