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[HTML][HTML] Metamorphic InAs/InGaAs quantum dots for optoelectronic devices: A review
L Seravalli - Microelectronic Engineering, 2023 - Elsevier
InAs quantum dots grown on relaxed, metamorphic InGaAs buffers are an important
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
L Seravalli, G Trevisi, P Frigeri, D Rivas… - Applied physics …, 2011 - pubs.aip.org
We report on the growth by molecular beam epitaxy and the study by atomic force
microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots …
microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots …
All-optical fiber Hanbury Brown & Twiss interferometer to study 1300 nm single photon emission of a metamorphic InAs quantum dot
G Muñoz-Matutano, D Barrera, CR Fernández-Pousa… - Scientific reports, 2016 - nature.com
New optical fiber based spectroscopic tools open the possibility to develop more robust and
efficient characterization experiments. Spectral filtering and light reflection have been used …
efficient characterization experiments. Spectral filtering and light reflection have been used …
InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels
S Golovynskyi, OI Datsenko, L Seravalli… - Microelectronic …, 2021 - Elsevier
InAs/InGaAs heterostructures with quantum dots (QDs) have been studied for quite some
time for light-emitting diodes operating from the near to the far infrared range. However, the …
time for light-emitting diodes operating from the near to the far infrared range. However, the …
InAs/GaAs quantum dot semiconductor saturable absorber for controllable dual-wavelength passively Q-switched fiber laser
X Wang, YJ Zhu, C Jiang, YX Guo, XT Ge, HM Chen… - Optics …, 2019 - opg.optica.org
We experimentally demonstrate the first use of 1550-nm InAs/GaAs quantum dot
semiconductor saturable absorber mirror (QD-SESAM) in the dual-wavelength passively Q …
semiconductor saturable absorber mirror (QD-SESAM) in the dual-wavelength passively Q …
Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers
S Golovynskyi, O Datsenko, L Seravalli… - Semiconductor …, 2017 - iopscience.iop.org
Deep levels in metamorphic InAs/In x Ga 1− x As quantum dot (QD) structures are studied
with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and …
with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and …
2D–3D growth transition in metamorphic InAs/InGaAs quantum dots
L Seravalli, G Trevisi, P Frigeri - CrystEngComm, 2012 - pubs.rsc.org
We study the growth by Molecular Beam Epitaxy of InAs quantum dots (QDs) on InGaAs
metamorphic buffers (MBs), allowing independent control of the mismatch f between QDs …
metamorphic buffers (MBs), allowing independent control of the mismatch f between QDs …
Reviewing quantum dots for single-photon emission at 1.55 μm: a quantitative comparison of materials
L Seravalli, F Sacconi - Journal of Physics: Materials, 2020 - iopscience.iop.org
In this work, we present a review of quantum dot (QD) material systems that allow us to
obtain light emission in the telecom C-band at 1.55 µm. These epitaxial semiconductor …
obtain light emission in the telecom C-band at 1.55 µm. These epitaxial semiconductor …
Comparative study of photoelectric properties of metamorphic InAs/InGaAs and InAs/GaAs quantum dot structures
S Golovynskyi, L Seravalli, O Datsenko… - Nanoscale research …, 2017 - Springer
Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional
pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different …
pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different …
Broadband light sources based on InAs/InGaAs metamorphic quantum dots
L Seravalli, M Gioannini, F Cappelluti… - Journal of Applied …, 2016 - pubs.aip.org
We propose a design for a semiconductor structure emitting broadband light in the infrared,
based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In x Ga 1− x …
based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In x Ga 1− x …