Methods are described herein for etching metal films which are difficult to volatize. The
methods include exposing a metal film to a chlorine-containing precursor (eg Cl). Chlo rine …

(57) ABSTRACT A methodofetching carbon films on patterned heterogeneous structures is
described and includes a gas phase etch using remote plasma excitation. The remote …

4,006,047 4,209,357 4,214,946 4,232,060 4,234.628 4,265,943 4,364,803 4,368,223
4,397,812 4,468.413 4,565,601 4,571,819 4,579,618 4,585,920 4,625,678 4,632,857 …

An exemplary system may include a chamber configured to contain a semiconductor
substrate in a processing region of the chamber. The system may include a first remote …

An exemplary faceplate may include a conductive plate defining a plurality of apertures. The
faceplate may addi tionally include a plurality of inserts, and each one of the plurality of …

The authors have done an excellent job of clearly explaining the different nomenclature
used in plasma processing, with the meaning of the symbols and constants commonly …

(51) Int. Cl. 5,314,724 A 5/1994 Tsukune et al. CO3C 25/68(2006.01) 5,316,804 A 5/1994
Tomikawa et al. 5,319,247 A 6/1994 Matsuura C23F I/00(2006.01) 5,328,558. A 7/1994 …

Methods of etching exposed silicon on patterned heteroge neous structures is described
and includes a remote plasma etch formed from a fluorine-containing precursor and a …

The present invention pertains to methods of depositing low wet etch rate silicon nitride films
on Substrates using high density plasma chemical vapor deposition techniques at Sub strate …

(51) Int. Cl. but near the opening of the trenches. The methods then HOIL 2L/21763
(2006.01) include a remote plasma etch using plasma effluents formed HOIL …