High density vertical nanowire stack for field effect transistor

K Cheng, A Khakifirooz, J Li - US Patent 9,543,440, 2017 - Google Patents
An alternating stack of layers of a first epitaxial semicon ductor material and a second
epitaxial semiconductor mate rial is formed on a substrate. A fin stack is formed by patterning …

Multispectral imaging using silicon nanowires

P Hyunsung, Y Dan, SEO Kwanyong, YJ Yu… - US Patent App. 14 …, 2015 - Google Patents
0004 Conventional color imaging devices, such as digital cameras, use pixelated
monochromatic image sensors. Such as charge-coupled devices (CCDs), in connection with …

Plasmonic detector and method for manufacturing the same

P Bai, M Gu, E Li - US Patent 9,329,339, 2016 - Google Patents
BACKGROUND Both electronic and optical circuits are widely used, eg in information
transmission systems. Electronic circuits are typically very small but their operation speed is …

High density vertical nanowire stack for field effect transistor

K Cheng, A Khakifirooz, J Li - US Patent 10,147,804, 2018 - Google Patents
US10147804B2 - High density vertical nanowire stack for field effect transistor - Google
Patents US10147804B2 - High density vertical nanowire stack for field effect transistor …

Broadband, polarization-independent, omnidirectional, metamaterial-based antireflection coating

CEA Cordaro, EF Pecora, ML Brongersma… - US Patent …, 2022 - Google Patents
To address the needs in the art, a method of fabricating a meta-surface antireflective coating
that includes forming on a substrate or in a film on the substrate, using a patterning method …

High information content imaging using Mie photo sensors

KF Bradley, M Nardone, RK Carder - US Patent 11,843,064, 2023 - Google Patents
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …