A review of tunnel field-effect transistors for improved ON-state behaviour

KRN Karthik, CK Pandey - Silicon, 2023 - Springer
Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can
possibly replace the traditional MOSFET from current IC technology. It has gained much …

Ultralow-power optoelectronic synaptic transistors based on polyzwitterion dielectrics for in-sensor reservoir computing

X Wu, S Shi, B Liang, Y Dong, R Yang, R Ji, Z Wang… - Science …, 2024 - science.org
Bio-inspired transistor synapses use solid electrolytes to achieve low-power operation and
rich synaptic behaviors via ion diffusion and trap**. While these neuromorphic devices …

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications

Z Zhang, G Tian, J Huo, F Zhang, Q Zhang… - Science China …, 2023 - Springer
Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-
steep logical switching and low power non-volatile memory functions, have significant …

Analysis of hetero-stacked source TFET and heterostructure vertical TFET as dielectrically modulated label-free biosensors

K Vanlalawmpuia, B Bhowmick - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
This paper reports an extensive comparison of a hetero-stacked source tunnel field effect
transistor (TFET) and heterostructure vertical TFET as label-free biosensors based on …

Sensitivity analysis on dielectric modulated Ge-source DMDG TFET based label-free biosensor

R Saha, Y Hirpara, S Hoque - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This work compares the performance of dielectric modulated (DM) based Ge-source dual
material double gate (DMDG) Tunnel Field Effect Transistor (TFET) and conventional (C) …

DC and RF/analog performances of split source horizontal pocket and hetero stack TFETs considering interface trap charges: a simulation study

S Tiwari, R Saha - Microelectronics Reliability, 2022 - Elsevier
This work investigates the impact of different types of interface trap charges (ITCs) on
electrical parameters of split source horizontal pocket Z shape TFET (ZHP-TFET) and Hetero …

Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors

S Chander, SK Sinha, R Chaudhary… - Semiconductor …, 2022 - iopscience.iop.org
This paper reports on a comparative study of the analysis of electrical noise of
heterojunction tunnelling-field-effect-transistors with an L-shaped gate (LTFET) and with a T …

A Novel Extended Source TFET with δp+- SiGe Layer

J Talukdar, G Rawat, K Mummaneni - Silicon, 2020 - Springer
Tunnel FET (TFET) is a significant discovery in the field of low power application, which has
the ability to sustain short channel effects arising due to scaling. But the disadvantage of …

Impact of back gate-drain overlap on DC and analog/HF performance of a ferroelectric negative capacitance double gate TFET

AK Pathakamuri, CK Pandey - Physica Scripta, 2023 - iopscience.iop.org
In this manuscript, we present a negative capacitance TFET with extended back gate-drain
overlap (DEBG-NC-TFET) to enhance DC and analog/high frequency (HF) performance …

Effect of asymmetric gate–drain overlap on ambipolar behavior of double-gate TFET and its impact on HF performances

CK Pandey, A Singh, S Chaudhury - Applied Physics A, 2020 - Springer
To remove simultaneously the ambipolar conduction and enhance HF performances, we
propose a promising configuration of DG-TFET with asymmetric gate–drain overlap (ASGDO …