Dilute ferromagnetic semiconductors: Physics and spintronic structures
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
A ten-year perspective on dilute magnetic semiconductors and oxides
Over the past ten years, the search for compounds combining the properties of
semiconductors and ferromagnets has evolved into an important field of materials science …
semiconductors and ferromagnets has evolved into an important field of materials science …
Visualizing Critical Correlations Near the Metal-Insulator Transition in Ga1-xMnxAs
Electronic states in disordered conductors on the verge of localization are predicted to
exhibit critical spatial characteristics indicative of the proximity to a metal-insulator phase …
exhibit critical spatial characteristics indicative of the proximity to a metal-insulator phase …
Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn) As
The question of whether the Anderson–Mott localization enhances or reduces magnetic
correlations is central to the physics of magnetic alloys. Particularly intriguing is the case of …
correlations is central to the physics of magnetic alloys. Particularly intriguing is the case of …
Controlling the Curie temperature in (Ga, Mn) As through location of the Fermi level within the impurity band
Abstract The ferromagnetic semiconductor (Ga, Mn) As has emerged as the most studied
material for prototype applications in semiconductor spintronics. Because ferromagnetism in …
material for prototype applications in semiconductor spintronics. Because ferromagnetism in …
Unveiling the impurity band induced ferromagnetism in the magnetic semiconductor (Ga, Mn) As
(Ga, Mn) As is a paradigm of a diluted magnetic semiconductor which shows
ferromagnetism induced by doped hole carriers. With a few controversial models emerging …
ferromagnetism induced by doped hole carriers. With a few controversial models emerging …
Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides
The author reviews the present understanding of the hole-mediated ferromagnetism in
magnetically doped semiconductors and oxides as well as the origin of high temperature …
magnetically doped semiconductors and oxides as well as the origin of high temperature …
Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors
The presence of localized spins exerts a strong influence on quantum localization in doped
semiconductors. At the same time carrier-mediated interactions between the localized spins …
semiconductors. At the same time carrier-mediated interactions between the localized spins …
Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing
While the support for the existence of a Mn-derived impurity band in the diluted magnetic
semiconductor Ga 1− x Mn x As has recently increased, a detailed quantitative analysis of its …
semiconductor Ga 1− x Mn x As has recently increased, a detailed quantitative analysis of its …
Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor
The main objective of the review was to investigate the ferromagnetism of diluted magnetic
semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has …
semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has …