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Recent developments in perpendicular magnetic anisotropy thin films for data storage applications
The incessant demand for higher density, faster access time and lower power consuming
memory devices such as random access memories have driven tremendous research and …
memory devices such as random access memories have driven tremendous research and …
Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices
Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …
considerable attention due to features such as nonvolatility, high scalability, low power, and …
Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure
G Hu, Y Zhu, J ** constant in perpendicularly magnetized W/CoFeB/MgO films with high thermal stability
Perpendicular magnetic materials with low dam** constant and high thermal stability have
great potential for realizing high-density, non-volatile, and low-power consumption …
great potential for realizing high-density, non-volatile, and low-power consumption …
Large Field-like Spin–Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo
Spin–orbit torque magnetic random access memory (SOT-MRAM) has great promise in high
write speed and low power consumption. Mo can play a vital role in constructing a …
write speed and low power consumption. Mo can play a vital role in constructing a …
Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions
Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been
predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of …
predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of …
Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions
A strong perpendicular magnetic anisotropy (PMA) and a high thermal stability are essential
for long‐term stable storage of data in PMA‐based magnetic tunnel junctions (p‐MTJs). This …
for long‐term stable storage of data in PMA‐based magnetic tunnel junctions (p‐MTJs). This …