A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

The comparatively high coercive field in Hf0. 5Zr0. 5O2 (HZO) and other HfO2-based
ferroelectric thin films leads to two critical challenges for their application in embedded …

In this work, we demonstrate high-performance indium–tin-oxide (ITO) transistors with a
channel thickness down to 1 nm and ferroelectric Hf0. 5Zr0. 5O2 as gate dielectric. An on …

A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for
nonvolatile memory and neuromorphic computing applications. In this work, we propose and …

In this work, we report on an ultrafast direct measurement on the transient ferroelectric
polarization switching in hafnium zirconium oxide with a crossbar metal-insulator-metal …

In this study, a decreased oxygen vacancy concentration [V o] and an increased ZrO 2-HfO 2
interface area were experimentally and theoretically demonstrated to favor the formation of …

Hafnia-based ferroelectric (FE) thin films are promising candidates for semiconductor
memories. However, a fundamental challenge that persists is the lack of understanding …

In this work, a conventional HfO2 gate dielectric layer is replaced with a 3-nm ferroelectric
(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors (FinFETs). Fe …