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Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching
Negative differential resistance (NDR) behavior observed in several transition metal oxides
is crucial for develo** next‐generation memory devices and neuromorphic computing …
is crucial for develo** next‐generation memory devices and neuromorphic computing …
[HTML][HTML] Measurement of the crystallization and phase transition of niobium dioxide thin-films using a tube furnace optical transmission system
Niobium dioxide has a volatile memristive phase change that occurs∼ 800 C that makes it
an ideal candidate for future neuromorphic electronics. A straightforward optical system has …
an ideal candidate for future neuromorphic electronics. A straightforward optical system has …
Pseudogap and electron localization in the shell of bulk crystal
L Craco, MS Laad - Physical Review B, 2023 - APS
We present a detailed study of correlation-induced electronic reconstruction in NbO 2 bulk
crystal. Using density functional plus dynamical mean-field theory (DFT+ DMFT), we show …
crystal. Using density functional plus dynamical mean-field theory (DFT+ DMFT), we show …
[HTML][HTML] Enhancement in neuromorphic NbO2 threshold switching at cryogenic temperatures
The electrical properties and performance characteristics of niobium dioxide (NbO 2)-
based threshold switching devices are examined at cryogenic temperatures …
based threshold switching devices are examined at cryogenic temperatures …