In the past several years, research in each of the wide‐band‐gap semiconductors, SiC,
GaN, and ZnSe, has led to major advances which now make them viable for device …

Wide-band-gap II–VI semiconductors have a potential for a variety of applications especially
in the areas of light-emitting and light-detecting devices, photovoltaic conversion (solar …

Zinc oxide is a promising material for blue and UV solid-state lighting devices, among other
applications. Nitrogen has been regarded as a potential p-type dopant for ZnO. However …

The extreme properties of diamond, SiC and GaN provide combinations of attributes for high-
power,-temperature,-frequency and optoelectronic applications. The methods of deposition …

N 2-doped ZnTe was introduced onto 1-µm-thick CdTe absorbers in order to reduce the
carrier recombination at the back contact of CdS/CdTe/C/Ag configuration solar cells. ZnTe …

We present a detailed study of p-type do** of Te-based compounds CdTe, ZnTe and
alloys CdMgTe, ZnMgTe, and CdZnTe during molecular beam epitaxy, using nitrogen atoms …

From the results of first-principles pseudopotential calculations we identify a new type of low
energy lattice instability that is most effective in acceptor passivation in II-VI semiconductors …

We investigate the do** behavior of ZnSe/ZnTe short period superlattices. p‐type do**
is achieved with a dc nitrogen plasma source, n‐type do** with chlorine from a ZnCl2 …

The p‐type do** of ZnTe, CdTe, and Cd1− x Zn x Te (CZT) using a nitrogen dc plasma
source during growth by molecular beam epitaxy is demonstrated. For ZnTe, do** levels …

ZnS layers were grown by metalorganic vapor phase epitaxy on GaAs substrates using
diethylzinc, ditertiarybutyl sulphide, and triallylamine as organometallic sources. After …