1/f noise: Implications for solid-state quantum information
E Paladino, YM Galperin, G Falci, BL Altshuler - Reviews of Modern Physics, 2014 - APS
The efficiency of the future devices for quantum information processing is limited mostly by
the finite decoherence rates of the individual qubits and quantum gates. Recently …
the finite decoherence rates of the individual qubits and quantum gates. Recently …
Molecular beam epitaxy of ultra-high-quality AlGaAs/GaAs heterostructures: Enabling physics in low-dimensional electronic systems
Among very-low-disorder systems of condensed matter, the high-mobility two-dimensional
electron gas (2DEG) confined in aluminum gallium arsenide (AlGaAs)–gallium arsenide …
electron gas (2DEG) confined in aluminum gallium arsenide (AlGaAs)–gallium arsenide …
Low-frequency charge noise in Si/SiGe quantum dots
Electron spins in silicon have long coherence times and are a promising qubit platform.
However, electric field noise in semiconductors poses a challenge for most single-and …
However, electric field noise in semiconductors poses a challenge for most single-and …
Noise suppression using symmetric exchange gates in spin qubits
We demonstrate a substantial improvement in the spin-exchange gate using symmetric
control instead of conventional detuning in GaAs spin qubits, up to a factor of six increase in …
control instead of conventional detuning in GaAs spin qubits, up to a factor of six increase in …
Interferometric single-shot parity measurement in InAs–Al hybrid devices
The fusion of non-Abelian anyons is a fundamental operation in measurement-only
topological quantum computation. In one-dimensional topological superconductors (1DTSs) …
topological quantum computation. In one-dimensional topological superconductors (1DTSs) …
Quantum coherence in a one-electron semiconductor charge qubit
We study quantum coherence in a semiconductor charge qubit formed from a GaAs double
quantum dot containing a single electron. Voltage pulses are applied to depletion gates to …
quantum dot containing a single electron. Voltage pulses are applied to depletion gates to …
Exploiting a single‐crystal environment to minimize the charge noise on qubits in silicon
Electron spins in silicon offer a competitive, scalable quantum‐computing platform with
excellent single‐qubit properties. However, the two‐qubit gate fidelities achieved so far have …
excellent single‐qubit properties. However, the two‐qubit gate fidelities achieved so far have …
Loading a quantum-dot based “Qubyte” register
Electrostatically defined quantum dot arrays offer a compelling platform for quantum
computation and simulation. However, tuning up such arrays with existing techniques …
computation and simulation. However, tuning up such arrays with existing techniques …
Three-electron spin qubits
The goal of this article is to review the progress of three-electron spin qubits from their
inception to the state of the art. We direct the main focus towards the exchange-only qubit …
inception to the state of the art. We direct the main focus towards the exchange-only qubit …
[HTML][HTML] Comparison of low frequency charge noise in identically patterned Si/SiO2 and Si/SiGe quantum dots
We investigate and compare the charge noise in Si/SiO 2 and Si/SiGe gate defined quantum
dots with identically patterned gates by measuring the low frequency 1/f current noise …
dots with identically patterned gates by measuring the low frequency 1/f current noise …