A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition
Gallium oxide (Ga2O3) is a highly promising ultrawide‐bandgap semiconductor for power
electronics that emerged about a decade ago. Epitaxial growth Ga2O3 at the small scale is …
electronics that emerged about a decade ago. Epitaxial growth Ga2O3 at the small scale is …
Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures
ABSTRACT β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG)
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …
Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts
Here we demonstrate a dramatic improvement in Ti/Au ohmic contact performance by
utilizing the anisotropic nature of β-Ga2O3. Under a similar do** concentration, Ti/Au …
utilizing the anisotropic nature of β-Ga2O3. Under a similar do** concentration, Ti/Au …
[HTML][HTML] Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a
growth rate of∼ 1 µm/h with control of the silicon do** concentration from 5× 1016 to 1019 …
growth rate of∼ 1 µm/h with control of the silicon do** concentration from 5× 1016 to 1019 …
[HTML][HTML] Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application
This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga 2 O 3
films with the aim of meeting the requirements to act as drift layers for high-power electronic …
films with the aim of meeting the requirements to act as drift layers for high-power electronic …
High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes
We report on the growth of Si-doped homoepitaxial β-Ga 2 O 3 thin films on (010) Ga 2 O 3
substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium …
substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium …
Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3: N with high mobility
Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga 2
O 3 has been investigated. Nitrogen acceptors with the concentration of∼ 10 17 cm− 3 were …
O 3 has been investigated. Nitrogen acceptors with the concentration of∼ 10 17 cm− 3 were …
Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium
Growths of monoclinic (AlxGa1− x) 2O3 thin films up to 99% Al contents are demonstrated
via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the …
via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the …
Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals
The thermal stability of different Schottky contacts (Au, Pt, and Ni) on (100) β‐Ga2O3 single
crystals grown by the Czochralski method is investigated. Besides the examination of the …
crystals grown by the Czochralski method is investigated. Besides the examination of the …
Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films
S Kuang, Z Yang, Z Zhang, Z Sheng, S Wei… - Materials Today …, 2024 - Elsevier
In this work, we report the transport, defect state and electronic structure properties of
unintentionally doped (UID) and Sn doped β-Ga 2 O 3 homo-epitaxial thin films grown by …
unintentionally doped (UID) and Sn doped β-Ga 2 O 3 homo-epitaxial thin films grown by …