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Memristors with tunable volatility for reconfigurable neuromorphic computing
Neuromorphic computing promises an energy-efficient alternative to traditional digital
processors in handling data-heavy tasks, primarily driven by the development of both …
processors in handling data-heavy tasks, primarily driven by the development of both …
Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses
In this work, electronic synaptic plasticity and analog bipolar switching behavior by using a
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Nonvolatile bipolar resistive switching characteristics of aluminum oxide grown by thermal oxidation processes
WC Jhang, YS Chien, CC Hsu - Semiconductor Science and …, 2024 - iopscience.iop.org
This study proposes a bipolar resistive random-access memory (RRAM), which is fabricated
using an aluminum oxide (AlO x) resistive switching (RS) layer. The RRAM shows a large …
using an aluminum oxide (AlO x) resistive switching (RS) layer. The RRAM shows a large …
Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing …
MZ Ansari, P Janicek, YJ Park, S NamGung… - Applied Surface …, 2023 - Elsevier
In the present study, HfO 2 thin films were fabricated via atomic layer deposition (ALD) using
a novel heteroleptic metal organic precursor [tris (dimethylamino) …
a novel heteroleptic metal organic precursor [tris (dimethylamino) …