Research into self-assembled semiconductor quantum dots (QDs) has helped advance
numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By …

We investigate the optical properties of InGaAs surface quantum dots (SQDs) in a composite
nanostructure with a layer of similarly grown buried quantum dots (BQDs) separated by a …

The optical properties are investigated by spectroscopic characterizations for bilayer
InGaAs/GaAs quantum dot (QD) structures consisting of a layer of surface quantum dots …

Abstract The In (Ga) As/GaAs surface quantum dots (SQDs) have become appealing
recently due to the special surface sensitivity property and consequently the advantage in …

InGaAs/GaAs surface quantum dot (SQD) heterostructures have long been viewed as
having great potential for realizing environmental gas detection devices. The research has …

Strain control and photoluminescence (PL) enhancement of InAs surface quantum dots
(SQDs), exposed to ambient conditions, have been achieved by introducing underlying …

This work exploits carrier injection hybrid structures in which carriers are injected into a layer
of In 0.4 Ga 0.6 As surface quantum dots (SQDs) from an adjacent In 0.15 Ga 0.85 As …

Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very
useful strategy to develop QD devices. This research aims to study the carrier injection effect …

A detailed analysis of the electrical response of In 0.3 Ga 0.7 As surface quantum dots
(SQDs) coupled to 5-layer buried quantum dots (BQDs) is carried out as a function of …

Abstract In (Ga) As surface quantum dots (SQDs) are promising candidates for surface-
sensitive detection applications. As such, studies of the carrier dynamics are indispensable …