Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

A Manchon, J Železný, IM Miron, T Jungwirth… - Reviews of Modern …, 2019 - APS
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged
as a powerful tool to generate complex magnetic textures, interconvert charge and spin …

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

B Dieny, M Chshiev - Reviews of Modern Physics, 2017 - APS
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

A new spin on magnetic memories

AD Kent, DC Worledge - Nature nanotechnology, 2015 - nature.com
Spin-transfer-torque magnetic random access memory (STT-MRAM) devices store
information in the orientation of the magnetization of nanometre-scale ferromagnetic …

Future perspectives for spintronic devices

A Hirohata, K Takanashi - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Spintronics is one of the emerging research fields in nanotechnology and has been growing
very rapidly. Studies of spintronics were started after the discovery of giant …

Current-induced torques in magnetic materials

A Brataas, AD Kent, H Ohno - Nature materials, 2012 - nature.com
The magnetization of a magnetic material can be reversed by using electric currents that
transport spin angular momentum. In the reciprocal process a changing magnetization …

Basic principles of STT-MRAM cell operation in memory arrays

AV Khvalkovskiy, D Apalkov, S Watts… - Journal of Physics D …, 2013 - iopscience.iop.org
For reliable operation, individual cells of an STT-MRAM memory array must meet specific
requirements on their performance. In this work we review some of these requirements and …

Ultrafast magnetization switching by spin-orbit torques

K Garello, CO Avci, IM Miron, M Baumgartner… - Applied Physics …, 2014 - pubs.aip.org
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic
bilayers allow for a switching geometry based on in-plane current injection. Using this …

Low-power non-volatile spintronic memory: STT-RAM and beyond

KL Wang, JG Alzate, PK Amiri - Journal of Physics D: Applied …, 2013 - iopscience.iop.org
The quest for novel low-dissipation devices is one of the most critical for the future of
semiconductor technology and nano-systems. The development of a low-power, universal …

Spin-transfer torque magnetic random access memory (STT-MRAM)

D Apalkov, A Khvalkovskiy, S Watts, V Nikitin… - ACM Journal on …, 2013 - dl.acm.org
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic
memory technology that leverages the base platform established by an existing 100+ nm …

Spin transfer torques

DC Ralph, MD Stiles - Journal of Magnetism and Magnetic Materials, 2008 - Elsevier
This tutorial article introduces the physics of spin transfer torques in magnetic devices. Our
intention is that it be accessible to beginning graduate students. We provide an elementary …