Dual hydrogen barrier layer for memory devices
A device includes, in a first region, a first conductive interconnect, an electrode structure on
the first conductive interconnect, where the electrode structure includes a first conductive …
the first conductive interconnect, where the electrode structure includes a first conductive …
Method of fabricating pedestal based memory devices using pocket integration
A pocket integration for high density memory and logic applications and methods of
fabrication are described. While various examples are described with reference to FeRAM …
fabrication are described. While various examples are described with reference to FeRAM …
Spin-orbit-torque magnetoresistive random-access memory array
D Worledge, P Hashemi, JK DeBrosse - US Patent 12,020,736, 2024 - Google Patents
A spin-orbit torque magnetoresistive random-access memory device formed by forming an
array of transistors, where a column of the array includes a source line contacting the source …
array of transistors, where a column of the array includes a source line contacting the source …
Thin film diode based back-end temperature sensors
R Pillarisetty, P Majhi, AA Sharma… - US Patent App. 15 …, 2019 - Google Patents
Electronic devices, integrated circuit device structures, and computing devices including thin
film, diode-based temperature sensors are disclosed. An electronic device includes a diode …
film, diode-based temperature sensors are disclosed. An electronic device includes a diode …
Pocket integration process for embedded memory
A pocket integration for high density memory and logic applications and methods of
fabrication are described. While various embodiments are described with reference to …
fabrication are described. While various embodiments are described with reference to …
Planar and trench capacitors for logic and memory applications
A device includes, in a first region, a first conductive interconnect, an electrode structure on
the first conductive interconnect, where the electrode structure includes a first conductive …
the first conductive interconnect, where the electrode structure includes a first conductive …
Devices with continuous electrode plate and methods of fabrication
An integration process including an etch stop layer for high density memory and logic
applications and methods of fabrication are described. While various examples are …
applications and methods of fabrication are described. While various examples are …
Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications
A device includes, in a first region, a first conductive interconnect, an electrode structure on
the first conductive interconnect, where the electrode structure includes a first conductive …
the first conductive interconnect, where the electrode structure includes a first conductive …
Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication
A device includes, in a first region, a first conductive interconnect, an electrode structure on
the first conductive interconnect, where the electrode structure includes a first conductive …
the first conductive interconnect, where the electrode structure includes a first conductive …
Multi-level hydrogen barrier layers for memory applications
A device includes, in a first region, a first conductive interconnect, an electrode structure on
the first conductive interconnect, where the electrode structure includes a first conductive …
the first conductive interconnect, where the electrode structure includes a first conductive …