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Solution-processed memristors: performance and reliability
Memristive devices are gaining importance in the semiconductor industry for applications in
information storage, artificial intelligence cryptography and telecommunication. Memristive …
information storage, artificial intelligence cryptography and telecommunication. Memristive …
Can 2D semiconductors be game-changers for nanoelectronics and photonics?
2D semiconductors have interesting physical and chemical attributes that have led them to
become one of the most intensely investigated semiconductor families in recent history …
become one of the most intensely investigated semiconductor families in recent history …
Room‐temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures
The exceptional properties of two‐dimensional (2D) magnet materials present a novel
approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der …
approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der …
Advances of embedded resistive random access memory in industrial manufacturing and its potential applications
Embedded memory, which heavily relies on the manufacturing process, has been widely
adopted in various industrial applications. As the field of embedded memory continues to …
adopted in various industrial applications. As the field of embedded memory continues to …
The gap between academia and industry in resistive switching research
The gap between academia and industry in resistive switching research | Nature Electronics
Skip to main content Thank you for visiting nature.com. You are using a browser version with …
Skip to main content Thank you for visiting nature.com. You are using a browser version with …
Field-free spin–orbit torque driven switching of perpendicular magnetic tunnel junction through bending current
Current-induced spin–orbit torques (SOTs) enable fast and efficient manipulation of the
magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in …
magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in …
2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects
Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of
electronic materials. This is unsurprising since they both have superlative fundamental …
electronic materials. This is unsurprising since they both have superlative fundamental …
Spin-orbit torque switching of magnetic tunnel junctions for memory applications
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …
classes of materials and devices using electric currents, leading to novel spintronic memory …
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High …
We present herewith a novel approach of equally thick AFE/FE (ZrO2/HZO) bilayer stack
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …
Material choices for tunnel dielectric layer and gate blocking layer for ferroelectric NAND applications
We present an experimental study to compare the impacts of different dielectric materials-Al
2 O 3 and SiO 2 used as the tunnel dielectric layer (TDL) and the gate blocking layer (GBL) …
2 O 3 and SiO 2 used as the tunnel dielectric layer (TDL) and the gate blocking layer (GBL) …