Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure
We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …
Analysis of Insulator Breakdown Induced by Body-Grounded-Coupling Effect in GaN-Based MIS-HEMT
CH Lin, CH Yeh, PH Chen, TC Chang… - … on Electron Devices, 2025 - ieeexplore.ieee.org
This study focuses on abnormal breakdown issues observed during the practical operation
of D-mode GaN-based metal insulator semiconductor high electron mobility transistor (MIS …
of D-mode GaN-based metal insulator semiconductor high electron mobility transistor (MIS …
[HTML][HTML] TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
F Ercolano, L Balestra, S Leone, I Streicher… - … Electronic Devices and …, 2025 - Elsevier
The long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial
factor in their widespread adoption for high-power and high-frequency applications. Before …
factor in their widespread adoption for high-power and high-frequency applications. Before …
Role of trap**/detrap** in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations
The reliability issues of AlGaN/GaN high electron mobility transistors (HEMTs) are
investigated through technology computer-aided design (TCAD) simulations in order to …
investigated through technology computer-aided design (TCAD) simulations in order to …